2SK949M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK949M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220F

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2SK949M Datasheet (PDF)

..1. Size:134K fuji
2sk949m.pdf

"2SK949M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M"Powered by ICminer.com Electronic-Library Service CopyRight 2003

8.1. Size:135K 1
2sk949-mr.pdf

8.2. Size:278K inchange semiconductor
2sk949-mr.pdf

isc N-Channel MOSFET Transistor 2SK949-MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

9.1. Size:138K 1
2sk948.pdf

Discontinued product.Discontinued product.Discontinued product.

9.2. Size:3231K 1
2sk946.pdf

9.3. Size:233K 1
2sk947-m.pdf

9.4. Size:203K toshiba
2sk945.pdf

9.5. Size:540K toshiba
2sk944.pdf

Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor

9.6. Size:60K toshiba
2sk943.pdf

9.7. Size:130K fuji
2sk947.pdf

9.8. Size:67K no
2sk940.pdf

9.9. Size:63K no
2sk941.pdf

9.10. Size:304K inchange semiconductor
2sk948.pdf

isc N-Channel MOSFET Transistor 2SK948FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.11. Size:203K inchange semiconductor
2sk944.pdf

isc N-Channel MOSFET Transistor 2SK944DESCRIPTIONDrain Current I =22A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 V

9.12. Size:279K inchange semiconductor
2sk947-mr.pdf

isc N-Channel MOSFET Transistor 2SK947-MRFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSF65R190S2E

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