IRF9Z10
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9Z10
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 43
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 6.7
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 12(max)
nC
trⓘ - Tiempo de subida: 63
nS
Cossⓘ - Capacitancia
de salida: 170
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5
Ohm
Paquete / Cubierta:
TO220AB
- Selección de transistores por parámetros
IRF9Z10
Datasheet (PDF)
..2. Size:385K international rectifier
irf9z10.pdf 
PD - 90459AIRF9Z10DSDGTO-220ABGDSGate Drain Source06/24/05Document Number: 90118 www.vishay.com1IRF9Z10Document Number: 90118 www.vishay.com2IRF9Z10Document Number: 90118 www.vishay.com3IRF9Z10Document Number: 90118 www.vishay.com4IRF9Z10Document Number: 90118 www.vishay.com5IRF9Z10Document Number: 90118 www.vishay.com6IRF9Z10Peak Di
..3. Size:132K vishay
irf9z10pbf.pdf
IRF9Z10, SiHF9Z10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelQg (Max.) (nC) 12COMPLIANT 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requi
..4. Size:132K vishay
irf9z10 sihf9z10.pdf
IRF9Z10, SiHF9Z10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelQg (Max.) (nC) 12COMPLIANT 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requi
8.1. Size:361K international rectifier
irf9z14s.pdf
PD - 9.911AIRF9Z14S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z14S)VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating TemperatureRDS(on) = 0.50 Fast SwitchingG P- ChannelID = -6.7A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev
8.2. Size:1222K international rectifier
irf9z14spbf irf9z14lpbf.pdf
PD-96014IRF9Z14SPbFIRF9Z14LPbF Lead-Free06/08/05Document Number: 91088 www.vishay.com1IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com2IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com3IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com4IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com5IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com6IR
8.5. Size:251K international rectifier
irf9z14pbf.pdf
PD - 95628IRF9Z14PbF Lead-Free8/3/04Document Number: 91088 www.vishay.com1IRF9Z14PbFDocument Number: 91088 www.vishay.com2IRF9Z14PbFDocument Number: 91088 www.vishay.com3IRF9Z14PbFDocument Number: 91088 www.vishay.com4IRF9Z14PbFDocument Number: 91088 www.vishay.com5IRF9Z14PbFDocument Number: 91088 www.vishay.com6IRF9Z14PbFPeak Diode Recovery
8.7. Size:361K international rectifier
irf9z14s irf9z14l.pdf
PD - 9.911AIRF9Z14S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z14S)VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating TemperatureRDS(on) = 0.50 Fast SwitchingG P- ChannelID = -6.7A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev
8.8. Size:194K vishay
irf9z14spbf sihf9z14l sihf9z14s.pdf
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8
8.9. Size:127K vishay
irf9z14 sihf9z14.pdf
IRF9Z14, SiHF9Z14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 12 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requir
8.10. Size:129K vishay
irf9z14pbf sihf9z14.pdf
IRF9Z14, SiHF9Z14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 12 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requir
8.11. Size:192K vishay
irf9z14l irf9z14lpbf.pdf
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8
8.12. Size:169K vishay
irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8
8.13. Size:1813K cn vbsemi
irf9z14pbf.pdf
IRF9Z14PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter
Otros transistores... IRF9633
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History: IRF510A
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