2SK1941-01R Todos los transistores

 ..1. Size:126K  fuji
 2sk1941-01r.pdf

N-channel MOS-FET 2SK1941-01R FAP-IIA Series 600V 0,55 16A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > E

 7.1. Size:221K  inchange semiconductor
 2sk1941.pdf

isc N-Channel MOSFET Transistor 2SK1941 DESCRIPTION Drain Current I =16A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT

 8.1. Size:81K  renesas
 2sk1948.pdf

2SK1948 Silicon N Channel MOS FET REJ03G0987-0200 (Previous ADE-208-1335) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, motor control Outline RENESAS Package code PRSS0004ZF-A (Package name TO-3PL) D 1.

 8.2. Size:82K  renesas
 2sk1947.pdf

2SK1947 Silicon N Channel MOS FET REJ03G0986-0200 (Previous ADE-208-1334) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 140 ns) Suitable for switching regulator, motor control Outline RENESAS Package code PRSS0004ZF-A (Package

 8.3. Size:177K  fuji
 2sk1942-01.pdf

 8.4. Size:210K  fuji
 2sk1940.pdf

N-channel MOS-FET 2SK1940-01 FAP-IIA Series 600V 0,75 12A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

 8.5. Size:278K  fuji
 2sk1943-01.pdf

FUJI POWER MOSFET 2SK1943-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c

 8.6. Size:264K  fuji
 2sk1944-01.pdf

FUJI POWER MOSFET 2SK1944-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC General purpose power amplifier SC-65 EIAJ Equivalent circuit sche

 8.7. Size:189K  fuji
 2sk1945-01l-01s.pdf

N-channel MOS-FET 2SK1945-01L,S FAP-IIA Series 900V 2,8 5A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

 8.8. Size:64K  hitachi
 2sk1949l-s.pdf

2SK1949(L), 2SK1949(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Avalanche ratings Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.

 8.9. Size:237K  inchange semiconductor
 2sk1942-01.pdf

isc N-Channel MOSFET Transistor 2SK1942-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.10. Size:237K  inchange semiconductor
 2sk1940-01.pdf

isc N-Channel MOSFET Transistor 2SK1940-01 DESCRIPTION Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.11. Size:219K  inchange semiconductor
 2sk1940.pdf

isc N-Channel MOSFET Transistor 2SK1940 DESCRIPTION Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.12. Size:219K  inchange semiconductor
 2sk1942.pdf

isc N-Channel MOSFET Transistor 2SK1942 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 8.13. Size:237K  inchange semiconductor
 2sk1944-01.pdf

isc N-Channel MOSFET Transistor 2SK1944-01 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY