2SK2809-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK2809-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2

isc N-Channel MOSFET Transistor 2SK2809FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

2SK2804External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 450 V I = 100A, V = 0V(BR) DSS D GSV 450 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 450V, V = 0VDSS DS GSI 5 ADV 2.0 4.0 V V = 10V, I = 1mATH DS DI 20 AD (

2SK2802Silicon N Channel MOS FETLow Frequency Power SwitchingADE-208-537C (Z)4th. EditionJun 1998Features Low on-resistanceRDS(on) = 0. 2 typ. (VGS = 4 V, ID = 100 mA) 2.5V gate drive devices. Small package (MPAK)OutlineMPAK31D2G 1. Source2. Gate3. DrainS2SK2802Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to sour

2SK2805External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 450 V I = 100A, V = 0V(BR) DSS D GSV 450 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 450V, V = 0VDSS DS GSI 15 ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS DI 60

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2800 Silicon N Channel MOS FET High Speed Power Switching REJ03G1035-0900 (Previous: ADE-208-513G) Rev.9.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 15 m typ. High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2.

2SK2808-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2

2SK2807-01L,SFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switchingT-pack(L) T-pack(S)Low on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum

2SK2806-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25

2SK2803External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 450 V I = 100A, V = 0V(BR) DSS D GSV 450 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 450V, V = 0VDSS DS GSI 3 ADV 2.0 4.0 V V = 10V, I = 1mATH DS DI 12 AD (

isc N-Channel MOSFET Transistor 2SK2804FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

isc N-Channel MOSFET Transistor 2SK2803FEATURESDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor 2SK2805FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB