2SK2770-01 Todos los transistores

 ..1. Size:129K  fuji
 2sk2770-01.pdf

FUJI POWER MOSFET 2SK2770-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters EIAJ SC-65 Maximum ratings and characteristicAbsolute maximum ratings Equi

 8.1. Size:95K  1
 2sk2778 2sk2779.pdf

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 250 2SK2701A 450 30 7 28 35 130 100 30 100 450 2.0

 8.2. Size:444K  toshiba
 2sk2776.pdf

2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2776 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON-resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (V

 8.3. Size:425K  toshiba
 2sk2777.pdf

2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( --MOSV) 2SK2777 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Y = 5.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V

 8.4. Size:40K  sanyo
 2sk2775.pdf

Ordering number ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2128 4V drive. [2SK2775] Enables simplified fabrication, high-density mount- 8.2 ing, and miniaturization in end products due to the 7.8 6.2 0.6 surface mountable package. 3 1 2 0.3

 8.5. Size:36K  nec
 2sk277 2sk278.pdf

 8.6. Size:23K  panasonic
 2sk2772.pdf

Power F-MOS FETs 2SK2772 2SK2772(Tentative) Silicon N-Channel MOS Unit mm For high-speed switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 High-speed switching High drain-source voltage (VDSS) 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Ta = 25 C) 1 Gate 1 2 3 2 Drain Parameter Symbol Rating Unit Marking 3

 8.7. Size:199K  fuji
 2sk2771-01r.pdf

 8.8. Size:199K  no
 2sk1871 2sk2153 2sk2164 2sk2321 2sk2432 2sk2435 2sk2436 2sk2438 2sk2439 2sk2626 2sk2634 2sk2635 2sk2636 2sk2637 2sk2773.pdf

 8.9. Size:203K  inchange semiconductor
 2sk2777.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2777 FEATURES With TO-263(D2PAK) packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA