2SK3522-01 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3522-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 335 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 37 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de 2SK3522-01 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3522-01 datasheet
..1. Size:109K fuji
2sk3522-01.pdf 
2SK3522-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features 11.6 0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
7.1. Size:286K inchange semiconductor
2sk3522n.pdf
isc N-Channel MOSFET Transistor 2SK3522N FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
7.2. Size:331K inchange semiconductor
2sk3522w.pdf
isc N-Channel MOSFET Transistor 2SK3522W FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.1. Size:112K fuji
2sk3529-01.pdf
2SK3529-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle
8.2. Size:106K fuji
2sk3528.pdf
2SK3528-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise s
8.3. Size:252K fuji
2sk3526-01l-01s-01sj.pdf
2SK3526-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.4. Size:254K fuji
2sk3521-01l-01s-01sj.pdf
2SK3521-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power P4 Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle
8.5. Size:107K fuji
2sk3527-01.pdf
2SK3527-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features 11.6 0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
8.6. Size:106K fuji
2sk3523.pdf
2SK3523-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise
8.7. Size:103K fuji
2sk3520-01mr.pdf
FUJI POWER MOSFET200303 2SK3520-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle
8.8. Size:98K fuji
2sk3525.pdf
FUJI POWER MOSFET 2SK3525-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwis
8.9. Size:105K fuji
2sk3528-01r.pdf
2SK3528-01R 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles
8.10. Size:96K fuji
2sk3524-01.pdf
FUJI POWER MOSFET 2SK3524-01 200304 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.11. Size:290K inchange semiconductor
2sk3529-01.pdf
isc N-Channel MOSFET Transistor 2SK3529-01 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 1.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.12. Size:356K inchange semiconductor
2sk3526s.pdf
isc N-Channel MOSFET Transistor 2SK3526S FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.13. Size:227K inchange semiconductor
2sk3527.pdf
isc N-Channel MOSFET Transistor 2SK3527 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou
8.14. Size:284K inchange semiconductor
2sk3523-01r.pdf
isc N-Channel MOSFET Transistor 2SK3523-01R FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.15. Size:357K inchange semiconductor
2sk3521s.pdf
isc N-Channel MOSFET Transistor 2SK3521S FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.16. Size:282K inchange semiconductor
2sk3526l.pdf
isc N-Channel MOSFET Transistor 2SK3526L FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.17. Size:279K inchange semiconductor
2sk3525-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3525-01MR FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.18. Size:279K inchange semiconductor
2sk3520-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3520-01MR FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.19. Size:283K inchange semiconductor
2sk3521l.pdf
isc N-Channel MOSFET Transistor 2SK3521L FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.20. Size:287K inchange semiconductor
2sk3528-01r.pdf
isc N-Channel MOSFET Transistor 2SK3528-01R FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.37 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.21. Size:288K inchange semiconductor
2sk3524-01.pdf
isc N-Channel MOSFET Transistor 2SK3524-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Otros transistores... 2SK3516-01SJ, 2SK3517-01, 2SK3518-01MR, 2SK3519-01, 2SK3520-01MR, 2SK3521-01L, 2SK3521-01S, 2SK3521-01SJ, IRF840, 2SK3524-01, 2SK3526-01L, 2SK3526-01S, 2SK3526-01SJ, 2SK3527-01, 2SK3528-01R, 2SK3529-01, 2SK3531-01
