2SK3524-01
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3524-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 135
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 600
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 8
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5
V
Qgⓘ - Carga de la puerta: 8.5
nC
trⓘ - Tiempo de subida: 9
nS
Cossⓘ - Capacitancia
de salida: 100
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2
Ohm
Paquete / Cubierta:
TO220AB
Búsqueda de reemplazo de 2SK3524-01
MOSFET
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Selección ⓘ de transistores por parámetros
2SK3524-01
Datasheet (PDF)
..1. Size:96K fuji
2sk3524-01.pdf 
FUJI POWER MOSFET2SK3524-01200304N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
..2. Size:288K inchange semiconductor
2sk3524-01.pdf
isc N-Channel MOSFET Transistor 2SK3524-01FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.1. Size:112K fuji
2sk3529-01.pdf
2SK3529-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.2. Size:106K fuji
2sk3528.pdf
2SK3528-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline DrawingsTO-3PFFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise s
8.3. Size:252K fuji
2sk3526-01l-01s-01sj.pdf
2SK3526-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.4. Size:109K fuji
2sk3522-01.pdf
2SK3522-01200401FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeatures11.60.2High speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.5. Size:254K fuji
2sk3521-01l-01s-01sj.pdf
2SK3521-01L,S,SJ200303FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerP4Avalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.6. Size:107K fuji
2sk3527-01.pdf
2SK3527-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeatures11.60.2High speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.7. Size:106K fuji
2sk3523.pdf
2SK3523-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline DrawingsSuper FAP-G SeriesTO-3PFFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise
8.8. Size:103K fuji
2sk3520-01mr.pdf
FUJI POWER MOSFET2003032SK3520-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.9. Size:98K fuji
2sk3525.pdf
FUJI POWER MOSFET2SK3525-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwis
8.10. Size:105K fuji
2sk3528-01r.pdf
2SK3528-01R200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-3PFFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles
8.11. Size:290K inchange semiconductor
2sk3529-01.pdf
isc N-Channel MOSFET Transistor 2SK3529-01FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.9(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.12. Size:286K inchange semiconductor
2sk3522n.pdf
isc N-Channel MOSFET Transistor 2SK3522NFEATURESDrain Current : I = 21A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.13. Size:356K inchange semiconductor
2sk3526s.pdf
isc N-Channel MOSFET Transistor 2SK3526SFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.14. Size:227K inchange semiconductor
2sk3527.pdf
isc N-Channel MOSFET Transistor 2SK3527FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
8.15. Size:284K inchange semiconductor
2sk3523-01r.pdf
isc N-Channel MOSFET Transistor 2SK3523-01RFEATURESDrain Current : I = 21A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.16. Size:357K inchange semiconductor
2sk3521s.pdf
isc N-Channel MOSFET Transistor 2SK3521SFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.17. Size:282K inchange semiconductor
2sk3526l.pdf
isc N-Channel MOSFET Transistor 2SK3526LFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.18. Size:331K inchange semiconductor
2sk3522w.pdf
isc N-Channel MOSFET Transistor 2SK3522WFEATURESDrain Current : I = 21A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.19. Size:279K inchange semiconductor
2sk3525-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3525-01MRFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.20. Size:279K inchange semiconductor
2sk3520-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3520-01MRFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.21. Size:283K inchange semiconductor
2sk3521l.pdf
isc N-Channel MOSFET Transistor 2SK3521LFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.22. Size:287K inchange semiconductor
2sk3528-01r.pdf
isc N-Channel MOSFET Transistor 2SK3528-01RFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.37(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
Otros transistores... 2SK3517-01
, 2SK3518-01MR
, 2SK3519-01
, 2SK3520-01MR
, 2SK3521-01L
, 2SK3521-01S
, 2SK3521-01SJ
, 2SK3522-01
, 20N60
, 2SK3526-01L
, 2SK3526-01S
, 2SK3526-01SJ
, 2SK3527-01
, 2SK3528-01R
, 2SK3529-01
, 2SK3531-01
, 2SK3539
.
History: 2SK2708
| GSM3410
| AP2303GN
| AP9963AGP-HF
| IXFX44N50Q
| 2SK3541T2L
