2SK3684-01L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3684-01L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO262

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2SK3684-01L datasheet

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 2sk3684-01l.pdf pdf_icon

2SK3684-01L

isc N-Channel MOSFET Transistor 2SK3684-01L FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

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 2sk3684-01l-01s-01sj.pdf pdf_icon

2SK3684-01L

2SK3684-01L,S,SJ 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

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 2sk3684-01s.pdf pdf_icon

2SK3684-01L

isc N-Channel MOSFET Transistor 2SK3684-01S FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 4.2. Size:358K  inchange semiconductor
 2sk3684-01sj.pdf pdf_icon

2SK3684-01L

isc N-Channel MOSFET Transistor 2SK3684-01SJ FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

MOSTRAR MÁS

Otros transistores... 2SK3675-01, 2SK3676-01L, 2SK3676-01S, 2SK3676-01SJ, 2SK3678-01, 2SK3680-01, 2SK3681-01, 2SK3682-01, IRFB4115, 2SK3684-01S, 2SK3684-01SJ, 2SK3685-01, 2SK3686-01, 2SK3688-01L, 2SK3688-01S, 2SK3688-01SJ, 2SK3689-01