2SK3684-01SJ Todos los transistores

 

2SK3684-01SJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3684-01SJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 270 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO263
 

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2SK3684-01SJ Datasheet (PDF)

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2SK3684-01SJ

isc N-Channel MOSFET Transistor 2SK3684-01SJFEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 3.1. Size:358K  inchange semiconductor
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2SK3684-01SJ

isc N-Channel MOSFET Transistor 2SK3684-01SFEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 4.1. Size:262K  fuji
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2SK3684-01SJ

2SK3684-01L,S,SJ200309FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof ApplicationsP4 Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 4.2. Size:284K  inchange semiconductor
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2SK3684-01SJ

isc N-Channel MOSFET Transistor 2SK3684-01LFEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Otros transistores... 2SK3676-01S , 2SK3676-01SJ , 2SK3678-01 , 2SK3680-01 , 2SK3681-01 , 2SK3682-01 , 2SK3684-01L , 2SK3684-01S , IRFB4115 , 2SK3685-01 , 2SK3686-01 , 2SK3688-01L , 2SK3688-01S , 2SK3688-01SJ , 2SK3689-01 , 2SK3690-01 , 2SK3691-01MR .

History: STW52NK25Z | 2SK1201 | 11NM70G-TF1-T | STS5NF60L | STW56N65M2-4 | MCU04N65 | UT100N03G-TF3-T

 

 
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