2SK3688-01S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3688-01S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.57 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de 2SK3688-01S MOSFET

- Selecciónⓘ de transistores por parámetros

 

2SK3688-01S datasheet

 ..1. Size:357K  inchange semiconductor
2sk3688-01s.pdf pdf_icon

2SK3688-01S

isc N-Channel MOSFET Transistor 2SK3688-01S FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 0.1. Size:357K  inchange semiconductor
2sk3688-01sj.pdf pdf_icon

2SK3688-01S

isc N-Channel MOSFET Transistor 2SK3688-01SJ FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 4.1. Size:232K  fuji
2sk3688-01l-01s-01sj.pdf pdf_icon

2SK3688-01S

2SK3688-01L,S,SJ FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching Low on-resistance No secondary breadown Low driving power P4 Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 4.2. Size:283K  inchange semiconductor
2sk3688-01l.pdf pdf_icon

2SK3688-01S

isc N-Channel MOSFET Transistor 2SK3688-01L FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

Otros transistores... 2SK3681-01, 2SK3682-01, 2SK3684-01L, 2SK3684-01S, 2SK3684-01SJ, 2SK3685-01, 2SK3686-01, 2SK3688-01L, IRF630, 2SK3688-01SJ, 2SK3689-01, 2SK3690-01, 2SK3691-01MR, 2SK819, 2SK831, 2SK833, 2SK849