2SK855 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK855
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15 nS
Cossⓘ - Capacitancia de salida: 175 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de 2SK855 MOSFET
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2SK855 datasheet
9.4. Size:201K inchange semiconductor
2sk857.pdf 
isc N-Channel MOSFET Transistor 2SK857 DESCRIPTION Drain Current I =45A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr
9.5. Size:60K inchange semiconductor
2sk851.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION Drain Current ID=30A@ TC=25 Drain Source Voltage- VDSS=200V(Min) APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 200 V
9.6. Size:198K inchange semiconductor
2sk856.pdf
isc N-Channel MOSFET Transistor 2SK856 DESCRIPTION Drain Current I =45A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr
9.7. Size:62K inchange semiconductor
2sk859.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VA
9.8. Size:59K inchange semiconductor
2sk858.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- VDSS=600V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VA
9.9. Size:218K inchange semiconductor
2sk850.pdf
isc N-Channel MOSFET Transistor 2SK850 DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V D
Otros transistores... 2SK3690-01, 2SK3691-01MR, 2SK819, 2SK831, 2SK833, 2SK849, 2SK851, 2SK854, IRFP260, 2SK856, 2SK858, 2SK859, 2SK867, 2SK867A, 2SK868, 2SK868A, 2SK869
