2SK867A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK867A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   tonⓘ - Tiempo de encendido: 120 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO3P

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2SK867A Datasheet (PDF)

..1. Size:41K panasonic
2sk867 2sk867a.pdf

..2. Size:203K inchange semiconductor
2sk867a.pdf

isc N-Channel MOSFET Transistor 2SK867ADESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela

8.1. Size:203K inchange semiconductor
2sk867.pdf

isc N-Channel MOSFET Transistor 2SK867DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.1. Size:153K panasonic
2sk868 2sk868a.pdf

"2SK868""2SK868"

9.2. Size:62K inchange semiconductor
2sk869.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK869 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RAT

9.3. Size:203K inchange semiconductor
2sk868.pdf

isc N-Channel MOSFET Transistor 2SK868DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.4. Size:203K inchange semiconductor
2sk868a.pdf

isc N-Channel MOSFET Transistor 2SK868ADESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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