2SK3988-01 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3988-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 5 nS
Cossⓘ - Capacitancia de salida: 50 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.3 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de 2SK3988-01 MOSFET
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2SK3988-01 datasheet
..1. Size:292K fuji
2sk3988-01.pdf 
2SK3988-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless
..2. Size:289K inchange semiconductor
2sk3988-01.pdf
isc N-Channel MOSFET Transistor 2SK3988-01 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.2. Size:262K nec
2sk3984-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:294K fuji
2sk3986-01mr.pdf
2SK3986-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles
8.4. Size:300K fuji
2sk3987-01l-01s-01sj.pdf
2SK3987-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C
8.5. Size:221K fuji
2sk3981-01.pdf
2SK3981-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc
8.6. Size:294K fuji
2sk3989-01mr.pdf
2SK3989-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified)
8.7. Size:234K fuji
2sk3983-01l-s-sj.pdf
2SK3983-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C
8.8. Size:292K fuji
2sk3985-01.pdf
2SK3985-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless
8.9. Size:221K fuji
2sk3982-01mr.pdf
2SK3982-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance TO-220F No secondary breadown Low driving power Avalanche-proof High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (T
8.10. Size:357K inchange semiconductor
2sk3983-01s.pdf
isc N-Channel MOSFET Transistor 2SK3983-01S FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.11. Size:280K inchange semiconductor
2sk3986-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3986-01MR FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
8.12. Size:357K inchange semiconductor
2sk3987-01s.pdf
isc N-Channel MOSFET Transistor 2SK3987-01S FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.13. Size:276K inchange semiconductor
2sk398.pdf
isc N-Channel MOSFET Transistor 2SK398 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.14. Size:289K inchange semiconductor
2sk3981-01.pdf
isc N-Channel MOSFET Transistor 2SK3981-01 FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.15. Size:289K inchange semiconductor
2sk3989-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3989-01MR FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
8.16. Size:283K inchange semiconductor
2sk3983-01l.pdf
isc N-Channel MOSFET Transistor 2SK3983-01L FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.17. Size:289K inchange semiconductor
2sk3985-01.pdf
isc N-Channel MOSFET Transistor 2SK3985-01 FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.18. Size:283K inchange semiconductor
2sk3987-01l.pdf
isc N-Channel MOSFET Transistor 2SK3987-01L FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.19. Size:357K inchange semiconductor
2sk3983-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3983-01SJ FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.20. Size:280K inchange semiconductor
2sk3982-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3982-01MR FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
Otros transistores... 2SK868, 2SK868A, 2SK869, 2SK870, 2SK871, 2SK3987-01L, 2SK3987-01S, 2SK3987-01SJ, NCEP15T14, 2SK3989-01MR, 2SK3990-01L, 2SK3990-01S, 2SK3990-01SJ, 2SK3991, 2SK3991-ZK, 2SK3992, 2SK3992-ZK
