2SK3990-01S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3990-01S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.3 Ohm

Encapsulados: TO263

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2SK3990-01S datasheet

 ..1. Size:356K  inchange semiconductor
 2sk3990-01s.pdf pdf_icon

2SK3990-01S

isc N-Channel MOSFET Transistor 2SK3990-01S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 0.1. Size:356K  inchange semiconductor
 2sk3990-01sj.pdf pdf_icon

2SK3990-01S

isc N-Channel MOSFET Transistor 2SK3990-01SJ FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 4.1. Size:298K  fuji
 2sk3990-01l-01s-01sj.pdf pdf_icon

2SK3990-01S

2SK3990-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 4.2. Size:282K  inchange semiconductor
 2sk3990-01l.pdf pdf_icon

2SK3990-01S

isc N-Channel MOSFET Transistor 2SK3990-01L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

MOSTRAR MÁS

Otros transistores... 2SK870, 2SK871, 2SK3987-01L, 2SK3987-01S, 2SK3987-01SJ, 2SK3988-01, 2SK3989-01MR, 2SK3990-01L, IRFP450, 2SK3990-01SJ, 2SK3991, 2SK3991-ZK, 2SK3992, 2SK3992-ZK, 2SK3993, 2SK3993-ZK, 2SK3510