2SK3990-01SJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3990-01SJ Datasheet (PDF)

..1. Size:356K inchange semiconductor
2sk3990-01sj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3990-01SJFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

3.1. Size:356K inchange semiconductor
2sk3990-01s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3990-01SFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

4.1. Size:298K fuji
2sk3990-01l-01s-01sj.pdf pdf_icon

2SK3990-01L,S,SJFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

4.2. Size:282K inchange semiconductor
2sk3990-01l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3990-01LFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Otros transistores... 2SK871 , 2SK3987-01L , 2SK3987-01S , 2SK3987-01SJ , 2SK3988-01 , 2SK3989-01MR , 2SK3990-01L , 2SK3990-01S , IRFZ24N , 2SK3991 , 2SK3991-ZK , 2SK3992 , 2SK3992-ZK , 2SK3993 , 2SK3993-ZK , 2SK3510 , 2SK3510-S .