2SK3510 Todos los transistores

 

2SK3510 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3510
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 83 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 1300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO220AB
 

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2SK3510 datasheet

 ..1. Size:288K  inchange semiconductor
2sk3510.pdf pdf_icon

2SK3510

isc N-Channel MOSFET Transistor 2SK3510 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.1. Size:214K  renesas
2sk3510-s-z-zj.pdf pdf_icon

2SK3510

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:357K  inchange semiconductor
2sk3510-zj.pdf pdf_icon

2SK3510

isc N-Channel MOSFET Transistor 2SK3510-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 0.3. Size:282K  inchange semiconductor
2sk3510-s.pdf pdf_icon

2SK3510

isc N-Channel MOSFET Transistor 2SK3510-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

Otros transistores... 2SK3990-01S , 2SK3990-01SJ , 2SK3991 , 2SK3991-ZK , 2SK3992 , 2SK3992-ZK , 2SK3993 , 2SK3993-ZK , 10N65 , 2SK3510-S , 2SK3510-Z , 2SK3510-ZJ , 2SK3511 , 2SK3511-S , 2SK3511-Z , 2SK3511-ZJ , 2SK3512-01L .

History: APT5016BLLG

 

 
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