2SK3695-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3695-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 195 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 13 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 6.5 nS
Conductancia de drenaje-sustrato (Cd): 165 pF
Resistencia entre drenaje y fuente RDS(on): 0.55 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET 2SK3695-01
2SK3695-01 Datasheet (PDF)
2sk3695-01.pdf
2SK3695-01200309FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
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2sk3696-01mr.pdf
2SK3696-01MR200309FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3697-01.pdf
2SK3697-01N-CHANNEL SILICON POWER MOSFET200407Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless
2sk3694-01l-s-sj.pdf
2SK3694-01L,S,SJ200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]T-PackFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25
2sk3692-01.pdf
2SK3692-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
2sk3690-01.pdf
2SK3690-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3691-01mr.pdf
2SK3691-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
2sk3699-01mr.pdf
2SK3699-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3693-01mr.pdf
2SK3693-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
2sk3698-01.pdf
2SK3698-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
2sk3692-01.pdf
isc N-Channel MOSFET Transistor 2SK3692-01FEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3694-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3694-01SJFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
2sk3699-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3699-01MRFEATURESDrain Current : I = 3.7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
2sk3694-01l.pdf
isc N-Channel MOSFET Transistor 2SK3694-01LFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
2sk3694-01s.pdf
isc N-Channel MOSFET Transistor 2SK3694-01SFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
2sk3693-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3693-01MRFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
2sk3698-01.pdf
isc N-Channel MOSFET Transistor 2SK3698-01FEATURESDrain Current : I = 3.7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
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