IRF9Z30 Todos los transistores

PD- 96095 IRF9Z30PbF HEXFET POWER MOSFET Features P-Channel Verasatility Product Summary Compact Plastic Package Part Number VDS(V) RDSON ( ) ID (A) Fast Switching IRF9Z30PbF -50 0.14 -18 Low Drive Current Ease of Paralleling Excellent Temperature Stability D Lead-Free G S TO-220AB Description The HEXFET technology is the key to International Rectifier s advanced

IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel Versatility VDS (V) - 50 Compact Plastic Package RDS(on) ( )VGS = - 10 V 0.14 Fast Switching Qg (Max.) (nC) 39 Low Drive Current Qgs (nC) 10 Ease of Paralleling Excellent Temperature Stability Qgd (nC) 15 Material categorization For definitions of com

PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are

PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.10 l Fast Switching G l Fully Avalanche Rated ID S -19A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S

PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34NS) VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G P-Channel ID = -19A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS

PD - 94961 IRF9Z34PbF Lead-Free 01/30/04 Document Number 91092 www.vishay.com 1 IRF9Z34PbF Document Number 91092 www.vishay.com 2 IRF9Z34PbF Document Number 91092 www.vishay.com 3 IRF9Z34PbF Document Number 91092 www.vishay.com 4 IRF9Z34PbF Document Number 91092 www.vishay.com 5 IRF9Z34PbF Document Number 91092 www.vishay.com 6 IRF9Z34PbF TO-220AB Package O

PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS

PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34S) VDSS = -60V Low-profile through-hole (IRF9Z34L) 175 C Operating Temperature RDS(on) = 0.14 Fast Switching G P- Channel ID = -18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

IRF9Z34NPbF l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated G l Lead-Free Description S

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9

IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.14 P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT 175 C Operating Temperature Qgs (nC) 9.9 Fast Switching Qgd (nC) 16 Ease of Paralleling Configuration Single Simple Drive Requireme

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9

IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.14 P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT 175 C Operating Temperature Qgs (nC) 9.9 Fast Switching Qgd (nC) 16 Ease of Paralleling Configuration Single Simple Drive Requireme

IRF9Z34NS www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Load

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N FEATURES Static drain-source on-resistance RDS(on) 0.1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and relia