2SK3813 Datasheet. Equivalente

 ..1. Size:355K  inchange semiconductor
 2sk3813.pdf

isc N-Channel MOSFET Transistor 2SK3813 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.1. Size:242K  nec
 2sk3813-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:287K  inchange semiconductor
 2sk3813-z.pdf

isc N-Channel MOSFET Transistor 2SK3813-Z FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.1. Size:59K  1
 2sk3815.pdf

Ordering number EN8053A 2SK3815 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3815 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings U

 8.2. Size:40K  1
 2sk3818.pdf

Ordering number ENN8056 2SK3818 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3818 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.3. Size:37K  1
 2sk3819.pdf

Ordering number ENN8057 2SK3819 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3819 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.4. Size:258K  sanyo
 2sk3816.pdf

Ordering number ENN8054 2SK3816 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3816 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.5. Size:258K  sanyo
 2sk3817.pdf

Ordering number ENN8055 2SK3817 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3817 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.6. Size:268K  nec
 2sk3812-zp.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:244K  nec
 2sk3814-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:266K  nec
 2sk3811-zp.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:355K  inchange semiconductor
 2sk3814.pdf

isc N-Channel MOSFET Transistor 2SK3814 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.10. Size:357K  inchange semiconductor
 2sk3818s.pdf

isc N-Channel MOSFET Transistor 2SK3818S FEATURES Drain Current I = 74A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.11. Size:356K  inchange semiconductor
 2sk3819s.pdf

isc N-Channel MOSFET Transistor 2SK3819S FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.12. Size:357K  inchange semiconductor
 2sk3812-zp.pdf

isc N-Channel MOSFET Transistor 2SK3812-ZP FEATURES Drain Current I = 110A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.13. Size:357K  inchange semiconductor
 2sk3817s.pdf

isc N-Channel MOSFET Transistor 2SK3817S FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.14. Size:283K  inchange semiconductor
 2sk3817l.pdf

isc N-Channel MOSFET Transistor 2SK3817L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.15. Size:287K  inchange semiconductor
 2sk3814-z.pdf

isc N-Channel MOSFET Transistor 2SK3814-Z FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.16. Size:282K  inchange semiconductor
 2sk3816l.pdf

isc N-Channel MOSFET Transistor 2SK3816L FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.17. Size:283K  inchange semiconductor
 2sk3819l.pdf

isc N-Channel MOSFET Transistor 2SK3819L FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.18. Size:357K  inchange semiconductor
 2sk3815s.pdf

isc N-Channel MOSFET Transistor 2SK3815S FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.19. Size:283K  inchange semiconductor
 2sk3818l.pdf

isc N-Channel MOSFET Transistor 2SK3818L FEATURES Drain Current I = 74A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.20. Size:357K  inchange semiconductor
 2sk3811-zp.pdf

isc N-Channel MOSFET Transistor 2SK3811-ZP FEATURES Drain Current I = 110A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.21. Size:283K  inchange semiconductor
 2sk3815l.pdf

isc N-Channel MOSFET Transistor 2SK3815L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.22. Size:356K  inchange semiconductor
 2sk3816s.pdf

isc N-Channel MOSFET Transistor 2SK3816S FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi