2SK2901-01S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2901-01S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 55 nS
Cossⓘ - Capacitancia de salida: 910 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de 2SK2901-01S MOSFET
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2SK2901-01S datasheet
..1. Size:356K inchange semiconductor
2sk2901-01s.pdf 
isc N-Channel MOSFET Transistor 2SK2901-01S FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
4.1. Size:112K fuji
2sk2901-01l-01s.pdf
FUJI POWER MOS-FET 2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features T-Pack(L) T-Pack(S) High speed switching Low on-resistance 10+0.5 0.2 4.5 No secondary breadown 1.32 Low driving power Avalanche-proof +0.2 0.2 1.2 0.1 0.8 0.4+0.2 Applications 2.7 5.08 Switching regulators 1. Gate 2, 4. Drain UPS (Uninterruptible Power Supply) 3. Source DC-DC conv
4.2. Size:282K inchange semiconductor
2sk2901-01l.pdf
isc N-Channel MOSFET Transistor 2SK2901-01L FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.1. Size:358K 1
2sk2908-01l 2sk2908-01s.pdf
2SK2908-01L,S FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features High speed switching T-pack(L) T-pack(S) Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25
8.2. Size:220K sanyo
2sk2909.pdf
Ordering number ENN6312 N-Channel Silicon MOSFET 2SK2909 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A 2.5V drive. [2SK2909] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol
8.3. Size:110K fuji
2sk2900-01.pdf
FUJI POWER MOS-FET 2SK2900-01 N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) 3. Source DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles
8.4. Size:115K fuji
2sk2906-01.pdf
FUJI POWER MOS-FET 2SK2906-01 N-CHANNEL SILICON POWER MOS-FET Features TO-3P High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless ot
8.5. Size:97K fuji
2sk2907-01r.pdf
FUJI POWER MOS-FET 2SK2907-01R N-CHANNEL SILICON POWER MOS-FET TO-3PF Features 5.5 0.3 0.3 0.2 15.5 High speed switching 3.2 3.2+0.3 Low on-resistance No secondary breadown Low driving power Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 3.5 Applications 0.2 0.2 5.45 5.45 0.6+0.2 Switching regulators 1. Gate UPS (Uninterruptible Powe
8.6. Size:111K fuji
2sk2902-01mr.pdf
FUJI POWER MOS-FET 2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS (Uninterruptible Power Supply) 3. Source DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25
8.7. Size:115K fuji
2sk2903-01mr.pdf
FUJI POWER MOS-FET 2SK2903-01MR N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS (Uninterruptible Power Supply) 3. Source DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25
8.8. Size:111K fuji
2sk2904-01.pdf
FUJI POWER MOS-FET 2SK2904-01 N-CHANNEL SILICON POWER MOS-FET Features TO-3P High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless ot
8.9. Size:96K fuji
2sk2905-01r.pdf
FUJI POWER MOS-FET 2SK2905-01R N-CHANNEL SILICON POWER MOS-FET Features TO-3PF 5.5 0.3 0.3 High speed switching 0.2 15.5 3.2 3.2+0.3 Low on-resistance No secondary breadown Low driving power Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 Applications 3.5 0.2 0.2 5.45 5.45 0.6+0.2 Switching regulators 1. Gate UPS (Uninterruptible Pow
8.10. Size:288K inchange semiconductor
2sk2900-01.pdf
isc N-Channel MOSFET Transistor 2SK2900-01 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.11. Size:286K inchange semiconductor
2sk2906-01.pdf
isc N-Channel MOSFET Transistor 2SK2906-01 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.12. Size:357K inchange semiconductor
2sk2908-01s.pdf
isc N-Channel MOSFET Transistor 2SK2908-01S FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.13. Size:274K inchange semiconductor
2sk2907-01.pdf
isc N-Channel MOSFET Transistor 2SK2907-01 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.14. Size:279K inchange semiconductor
2sk2902-01mr.pdf
isc N-Channel MOSFET Transistor 2SK2902-01MR FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive
8.15. Size:279K inchange semiconductor
2sk2903-01mr.pdf
isc N-Channel MOSFET Transistor 2SK2903-01MR FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.16. Size:283K inchange semiconductor
2sk2908-01l.pdf
isc N-Channel MOSFET Transistor 2SK2908-01L FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.17. Size:286K inchange semiconductor
2sk2904-01.pdf
isc N-Channel MOSFET Transistor 2SK2904-01 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
8.18. Size:274K inchange semiconductor
2sk2905-01r.pdf
isc N-Channel MOSFET Transistor 2SK2905-01R FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
Otros transistores... 2SK2895-01, 2SK2896-01L, 2SK2896-01S, 2SK2897-01MR, 2SK2898-01, 2SK2899-01R, 2SK2900-01, 2SK2901-01L, 10N60, 2SK2902-01MR, 2SK2903-01MR, 2SK2904-01, 2SK2905-01R, 2SK2906-01, 2SK2907-01R, 2SK3580-01MR, 2SK3581-01L
