2SK3580-01MR Todos los transistores

 

2SK3580-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3580-01MR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 300 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 6.5 nS

Conductancia de drenaje-sustrato (Cd): 170 pF

Resistencia drenaje-fuente RDS(on): 0.28 Ohm

Empaquetado / Estuche: TO220F

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2SK3580-01MR Datasheet (PDF)

1.1. 2sk3580-01mr.pdf Size:105K _fuji

2SK3580-01MR
2SK3580-01MR

2SK3580-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unl

4.1. 2sk358.pdf Size:136K _update

2SK3580-01MR
2SK3580-01MR



4.2. 2sk3582tv.pdf Size:141K _toshiba

2SK3580-01MR
2SK3580-01MR

2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm • Application for Ultra-compact ECM 1.2±0.05 0.8±0.05 Absolute Maximum Ratings (Ta=25°C) 1 2 3 Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C) PD 100 mW Junction Temperature Tj 125 °C Stora

 4.3. 2sk3582tk.pdf Size:122K _toshiba

2SK3580-01MR
2SK3580-01MR

2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm • Application for Ultra-compact ECM 1.2±0.05 0.8±0.05 Absolute Maximum Ratings (Ta=25°C) 1 3 Characteristic Symbol Rating Unit 2 Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C) PD 100 mW Junction Temperature Tj 125 °C Storag

4.4. 2sk3581-01l-s-sj.pdf Size:251K _fuji

2SK3580-01MR
2SK3580-01MR

2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unle

 4.5. 2sk3588-01l-s-sj.pdf Size:246K _fuji

2SK3580-01MR
2SK3580-01MR

2SK3588-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof See to p4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25

4.6. 2sk3587-01mr.pdf Size:93K _fuji

2SK3580-01MR
2SK3580-01MR

2SK3587-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C un

4.7. 2sk3586-01.pdf Size:92K _fuji

2SK3580-01MR
2SK3580-01MR

2SK3586-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unl

4.8. 2sk3589-01.pdf Size:90K _fuji

2SK3580-01MR
2SK3580-01MR

FUJI POWER MOSFET200303 2SK3589-01 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schema

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

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