2SK3930-01S Todos los transistores

 

2SK3930-01S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3930-01S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 195 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

2SK3930-01S Datasheet (PDF)

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 2sk3930-01s.pdf pdf_icon

2SK3930-01S

isc N-Channel MOSFET Transistor 2SK3930-01SFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 0.1. Size:357K  inchange semiconductor
 2sk3930-01sj.pdf pdf_icon

2SK3930-01S

isc N-Channel MOSFET Transistor 2SK3930-01SJFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 4.1. Size:173K  fuji
 2sk3930-01l-s-sj.pdf pdf_icon

2SK3930-01S

2SK3930-01L,S,SJN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T

 4.2. Size:283K  inchange semiconductor
 2sk3930-01l.pdf pdf_icon

2SK3930-01S

isc N-Channel MOSFET Transistor 2SK3930-01LFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

MOSTRAR MÁS

Otros transistores... 2SK3592-01S , 2SK3592-01SJ , 2SK3593-01 , 2SK3927-01L , 2SK3927-01S , 2SK3927-01SJ , 2SK3928-01 , 2SK3930-01L , IRFP250 , 2SK3930-01SJ , 2SK3933-01L , 2SK3933-01S , 2SK3933-01SJ , 2SK3983-01L , 2SK3983-01S , 2SK3983-01SJ , 2SK3924-01L .

History: MMFTN3019E | WFY3N02 | APT904R2AN | 10N65KL-T2Q-T | SVF7N60CF | IRF7309IPBF | FQPF3N80C

 

 
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