2SK3930-01SJ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3930-01SJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 195 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO263

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2SK3930-01SJ datasheet

 ..1. Size:357K  inchange semiconductor
 2sk3930-01sj.pdf pdf_icon

2SK3930-01SJ

isc N-Channel MOSFET Transistor 2SK3930-01SJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 3.1. Size:357K  inchange semiconductor
 2sk3930-01s.pdf pdf_icon

2SK3930-01SJ

isc N-Channel MOSFET Transistor 2SK3930-01S FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 4.1. Size:173K  fuji
 2sk3930-01l-s-sj.pdf pdf_icon

2SK3930-01SJ

2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T

 4.2. Size:283K  inchange semiconductor
 2sk3930-01l.pdf pdf_icon

2SK3930-01SJ

isc N-Channel MOSFET Transistor 2SK3930-01L FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

MOSTRAR MÁS

Otros transistores... 2SK3592-01SJ, 2SK3593-01, 2SK3927-01L, 2SK3927-01S, 2SK3927-01SJ, 2SK3928-01, 2SK3930-01L, 2SK3930-01S, IRFB3607, 2SK3933-01L, 2SK3933-01S, 2SK3933-01SJ, 2SK3983-01L, 2SK3983-01S, 2SK3983-01SJ, 2SK3924-01L, 2SK3924-01S