2SK3930-01SJ Todos los transistores

 

2SK3930-01SJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3930-01SJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 195 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 11 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Tiempo de subida (tr): 7 nS
   Conductancia de drenaje-sustrato (Cd): 150 pF
   Resistencia entre drenaje y fuente RDS(on): 0.8 Ohm
   Paquete / Cubierta: TO263

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2SK3930-01SJ Datasheet (PDF)

 ..1. Size:357K  inchange semiconductor
2sk3930-01sj.pdf

2SK3930-01SJ 2SK3930-01SJ

isc N-Channel MOSFET Transistor 2SK3930-01SJFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 3.1. Size:357K  inchange semiconductor
2sk3930-01s.pdf

2SK3930-01SJ 2SK3930-01SJ

isc N-Channel MOSFET Transistor 2SK3930-01SFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 4.1. Size:173K  fuji
2sk3930-01l-s-sj.pdf

2SK3930-01SJ 2SK3930-01SJ

2SK3930-01L,S,SJN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T

 4.2. Size:283K  inchange semiconductor
2sk3930-01l.pdf

2SK3930-01SJ 2SK3930-01SJ

isc N-Channel MOSFET Transistor 2SK3930-01LFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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