2SK3598-01
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3598-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 105
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 29
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5
V
Qgⓘ - Carga de la puerta: 22
nC
trⓘ - Tiempo de subida: 3.8
nS
Cossⓘ - Capacitancia
de salida: 190
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.062
Ohm
Paquete / Cubierta:
TO220AB
Búsqueda de reemplazo de 2SK3598-01
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2SK3598-01
Datasheet (PDF)
..1. Size:93K fuji
2sk3598-01.pdf 
2SK3598-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
..2. Size:289K inchange semiconductor
2sk3598-01.pdf
isc N-Channel MOSFET Transistor 2SK3598-01FEATURESDrain Current : I = 29A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.1. Size:102K fuji
2sk3594-01.pdf
2SK3594-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.2. Size:102K fuji
2sk3593-01.pdf
2SK3593-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicFoot Print PatternAbsolute maximum ratings(
8.3. Size:99K fuji
2sk3591-01mr.pdf
2SK3591-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.4. Size:252K fuji
2sk3592-01l-s-sj.pdf
2SK3592-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofSee to P4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25
8.5. Size:98K fuji
2sk3590-01.pdf
2SK3590-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.6. Size:97K fuji
2sk3599-01mr.pdf
2SK3599-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.7. Size:106K fuji
2sk3597-01.pdf
2SK3597-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings Foot Print Pattern(T
8.8. Size:256K fuji
2sk3596-01l-s-sj.pdf
2SK3596-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.9. Size:103K fuji
2sk3595-01mr.pdf
2SK3595-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.10. Size:31K hitachi
2sk359.pdf
2SK359Silicon N-Channel MOS FETApplicationVHF amplifierOutlineTO-92 (2)1. Gate2. Source3. Drain3212SK359Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSX*1 20 VGate to source voltage VGSS 5VDrain current ID 30 mAGate current IG 1mAChannel power dissipation Pch 400 mWChannel temperature Tch 150 CStorage t
8.11. Size:356K inchange semiconductor
2sk3596s.pdf
isc N-Channel MOSFET Transistor 2SK3596SFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 66m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.12. Size:289K inchange semiconductor
2sk3594-01.pdf
isc N-Channel MOSFET Transistor 2SK3594-01FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 66m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.13. Size:253K inchange semiconductor
2sk3591.pdf
isc N-Channel MOSFET Transistor 2SK3591FEATURES Drain-source on-resistance:RDS(on) 41m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDS
8.14. Size:282K inchange semiconductor
2sk3592l.pdf
isc N-Channel MOSFET Transistor 2SK3592LFEATURESDrain Current : I = 57A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 41m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.15. Size:356K inchange semiconductor
2sk3592s.pdf
isc N-Channel MOSFET Transistor 2SK3592SFEATURESDrain Current : I = 57A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 41m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.16. Size:288K inchange semiconductor
2sk3590-01.pdf
isc N-Channel MOSFET Transistor 2SK3590-01FEATURESDrain Current : I = 57A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 41m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.17. Size:280K inchange semiconductor
2sk3599-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3599-01MRFEATURESDrain Current : I = 29A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.18. Size:280K inchange semiconductor
2sk3595-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3595-01MRFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 66m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.19. Size:282K inchange semiconductor
2sk3596l.pdf
isc N-Channel MOSFET Transistor 2SK3596LFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 66m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Otros transistores... 2SK3983-01S
, 2SK3983-01SJ
, 2SK3924-01L
, 2SK3924-01S
, 2SK3924-01SJ
, 2SK3921-01L
, 2SK3921-01S
, 2SK3921-01SJ
, P0903BDG
, 2SK3600-01L
, 2SK3600-01S
, 2SK3600-01SJ
, 2SK3601-01
, 2SK3602-01
, 2SK3603-01MR
, 2SK3604-01L
, 2SK3604-01S
.
