2SK1408 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK1408 DESCRIPTION Drain Current I =16A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solen

2SK1400, 2SK1400A Silicon N Channel MOS FET REJ03G0940-0200 (Previous ADE-208-1280) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name

2SK1405 Silicon N Channel MOS FET REJ03G0945-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast diode (trr = 140 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D

2SK1402, 2SK1402A Silicon N Channel MOS FET REJ03G0942-0200 (Previous ADE-208-1282) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name

2SK1404 Silicon N Channel MOS FET REJ03G0944-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Power F-MOS FETs 2SK1406 2SK1406 Silicon N-Channel Power F-MOS Unit mm Features Low ON-resistance RDS(on) RDS(on)= 0.32 (typ) 15.0 0.3 5.0 0.2 High-speed switching tf =140ns(typ) 11.0 0.2 3.2 No secondary breakdown 3.2 0.1 High breakdown voltage, large allowable power dissipation Applications 2.0 0.2 2.0 0.1 Non-contact relay Solenoid drive 1.1 0.1 0.6

2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25 C) Item Symb

2SK1401, 2SK1401A Silicon N-Channel MOS FET ADE-208-1281 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1401, 2SK1401A Absol

isc N-Channel MOSFET Transistor 2SK1409 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solen

isc N-Channel MOSFET Transistor 2SK1403 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and DC-DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

isc N-Channel MOSFET Transistor 2SK1402A DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

isc N-Channel MOSFET Transistor 2SK1403A DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and DC-DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

isc N-Channel MOSFET Transistor 2SK1402 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra

isc N-Channel MOSFET Transistor 2SK1401A DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1401 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain