2SK1408 Todos los transistores

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2SK1408 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1408

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.31 Ohm

Empaquetado / Estuche: TO3PN

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2SK1408 Datasheet (PDF)

1.1. 2sk1408.pdf Size:61K _inchange_semiconductor

2SK1408
2SK1408

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1408 DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA

4.1. rej03g0944_2sk1404ds.pdf Size:95K _renesas

2SK1408
2SK1408

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. 2sk1404.pdf Size:81K _renesas

2SK1408
2SK1408

2SK1404 Silicon N Channel MOS FET REJ03G0944-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1

4.3. 2sk1402.pdf Size:82K _renesas

2SK1408
2SK1408

2SK1402, 2SK1402A Silicon N Channel MOS FET REJ03G0942-0200 (Previous: ADE-208-1282) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D

4.4. 2sk1405.pdf Size:93K _renesas

2SK1408
2SK1408

2SK1405 Silicon N Channel MOS FET REJ03G0945-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast diode (trr = 140 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate G 2

4.5. 2sk1400.pdf Size:83K _renesas

2SK1408
2SK1408

2SK1400, 2SK1400A Silicon N Channel MOS FET REJ03G0940-0200 (Previous: ADE-208-1280) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D

4.6. rej03g0943_2sk1403ads.pdf Size:98K _renesas

2SK1408
2SK1408

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk1406.pdf Size:33K _panasonic

2SK1408
2SK1408

Power F-MOS FETs 2SK1406 2SK1406 Silicon N-Channel Power F-MOS Unit : mm Features Low ON-resistance RDS(on) : RDS(on)= 0.32?(typ) 15.0 0.3 5.0 0.2 High-speed switching : tf =140ns(typ) 11.0 0.2 3.2 No secondary breakdown o3.2 0.1 High breakdown voltage, large allowable power dissipation Applications 2.0 0.2 2.0 0.1 Non-contact relay Solenoid drive 1.1 0.1 0.6 0.2 Motor

4.8. 2sk1409.pdf Size:61K _inchange_semiconductor

2SK1408
2SK1408

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1409 DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA

Otros transistores... 2SK3605-01 , 2SK3606-01 , 2SK3608-01L , 2SK3608-01S , 2SK3608-01SJ , 2SK3609-01 , AF1332N , AF1333P , 40673 , 2SK1409 , 2SK1410 , 2SK1411 , 2SK1476 , 2SK1477 , 2SK1545 , 2SK1546 , 2SK1550 .

 


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Introduzca al menos 1 números o letras