IRFB9N30A Todos los transistores

 

IRFB9N30A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB9N30A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO220AB
 

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IRFB9N30A Datasheet (PDF)

 ..1. Size:137K  international rectifier
irfb9n30a.pdf pdf_icon

IRFB9N30A

PD- 91832IRFB9N30AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 300V Fast Switching Ease of ParalelingRDS(on) = 0.45 Simple Drive RequirementsGID = 9.3ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance an

 ..2. Size:871K  vishay
irfb9n30apbf.pdf pdf_icon

IRFB9N30A

IRFB9N30A, SiHFB9N30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dv/dt RatingVDS (V) 300AvailableRDS(on) ()VGS = 10 V Repetitive Avalanche Rated0.45RoHS*COMPLIANTQg (Max.) (nC) 33 Fast SwitchingQgs (nC) 6.9 Ease of ParallelingQgd (nC) 12 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDTO-220

 8.1. Size:135K  international rectifier
irfb9n60a.pdf pdf_icon

IRFB9N30A

PD - 91811IRFB9N60AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 600V Fast Switching Ease of ParalelingRDS(on) = 0.75 Simple Drive RequirementsGID = 9.2ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance a

 8.2. Size:156K  international rectifier
irfb9n65apbf.pdf pdf_icon

IRFB9N30A

PD - 95416IRFB9N65APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)650V 0.93 8.5Al Uninterruptible Power Supplyl High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andTO-22

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History: 2SK4207

 

 
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