IRFB9N30A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB9N30A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 96 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRFB9N30A MOSFET
IRFB9N30A Datasheet (PDF)
irfb9n30a.pdf

PD- 91832IRFB9N30AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 300V Fast Switching Ease of ParalelingRDS(on) = 0.45 Simple Drive RequirementsGID = 9.3ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance an
irfb9n30apbf.pdf

IRFB9N30A, SiHFB9N30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dv/dt RatingVDS (V) 300AvailableRDS(on) ()VGS = 10 V Repetitive Avalanche Rated0.45RoHS*COMPLIANTQg (Max.) (nC) 33 Fast SwitchingQgs (nC) 6.9 Ease of ParallelingQgd (nC) 12 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDTO-220
irfb9n60a.pdf

PD - 91811IRFB9N60AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 600V Fast Switching Ease of ParalelingRDS(on) = 0.75 Simple Drive RequirementsGID = 9.2ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance a
irfb9n65apbf.pdf

PD - 95416IRFB9N65APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)650V 0.93 8.5Al Uninterruptible Power Supplyl High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andTO-22
Otros transistores... IRF9Z32 , IRF9Z34 , IRF9Z34N , IRF9Z34NL , IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , 18N50 , IRFB9N60A , IRFB9N65A , IRFBA1404 , IRFBA22N50A , IRFBA35N60C , IRFBC20 , IRFBC20L , IRFBC20S .
History: 2SK4207
History: 2SK4207



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