IRFB9N30A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB9N30A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 33(max) nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRFB9N30A

IRFB9N30A Datasheet (PDF)

..1. Size:137K international rectifier
irfb9n30a.pdf

PD- 91832IRFB9N30AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 300V Fast Switching Ease of ParalelingRDS(on) = 0.45 Simple Drive RequirementsGID = 9.3ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance an

..2. Size:871K vishay
irfb9n30apbf.pdf

IRFB9N30A, SiHFB9N30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dv/dt RatingVDS (V) 300AvailableRDS(on) ()VGS = 10 V Repetitive Avalanche Rated0.45RoHS*COMPLIANTQg (Max.) (nC) 33 Fast SwitchingQgs (nC) 6.9 Ease of ParallelingQgd (nC) 12 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDTO-220

8.1. Size:135K international rectifier
irfb9n60a.pdf

PD - 91811IRFB9N60AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 600V Fast Switching Ease of ParalelingRDS(on) = 0.75 Simple Drive RequirementsGID = 9.2ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance a

8.2. Size:156K international rectifier
irfb9n65apbf.pdf

PD - 95416IRFB9N65APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)650V 0.93 8.5Al Uninterruptible Power Supplyl High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andTO-22

8.3. Size:157K international rectifier
irfb9n60apbf.pdf

PD - 94821SMPS MOSFETIRFB9N60APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.75 9.2A High speed power switching Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche V

8.4. Size:102K international rectifier
irfb9n65a.pdf

PD - 91815CSMPS MOSFETIRFB9N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 8.5A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

8.5. Size:223K vishay
irfb9n65a sihfb9n65a.pdf

IRFB9N65A, SiHFB9N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650Requirement AvailableRDS(on) ()VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 48COMPLIANTRuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 19and CurrentConfigu

8.6. Size:211K vishay
irfb9n60a sihfb9n60a.pdf

IRFB9N60A, SiHFB9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.75RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 20and CurrentConfig

8.7. Size:285K inchange semiconductor
irfb9n60a.pdf

iscN-Channel MOSFET Transistor IRFB9N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

8.8. Size:285K inchange semiconductor
irfb9n65a.pdf

iscN-Channel MOSFET Transistor IRFB9N65AFEATURESLow drain-source on-resistance:RDS(ON) =0.93 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Otros transistores... IRF9Z32 , IRF9Z34 , IRF9Z34N , IRF9Z34NL , IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFP250 , IRFB9N60A , IRFB9N65A , IRFBA1404 , IRFBA22N50A , IRFBA35N60C , IRFBC20 , IRFBC20L , IRFBC20S .

Liste

Recientemente añadidas las descripciónes de los transistores: