2SK1476 Todos los transistores

 

2SK1476 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1476

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.65 Ohm

Empaquetado / Estuche: TO3PN

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2SK1476 Datasheet (PDF)

1.1. 2sk1476.pdf Size:202K _inchange_semiconductor

2SK1476
2SK1476

isc N-Channel MOSFET Transistor 2SK1476 DESCRIPTION ·Drain Current –I =12A@ T =25℃ D C ·Drain Source Voltage- : V =450 (Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solen

4.1. 2sk147.pdf Size:59K _toshiba2

2SK1476
2SK1476

4.2. 2sk1470.pdf Size:97K _sanyo

2SK1476
2SK1476

Ordering number:EN3771A N-Channel Silicon MOSFET 2SK1470 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK1470] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symb

 4.3. 2sk1471.pdf Size:92K _sanyo

2SK1476
2SK1476

Ordering number:EN3772A N-Channel Silicon MOSFET 2SK1471 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1471] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SK1471] 6.5 2.3 5.0 0.5 4 0.5 0.85

4.4. 2sk1472.pdf Size:119K _sanyo

2SK1476
2SK1476

Ordering number:EN3773A N-Channel Silicon MOSFET 2SK1472 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1472] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SK1472] 6.5 2.3 5.0 0.5 4 0.5 0.85

 4.5. 2sk1474.pdf Size:120K _sanyo

2SK1476
2SK1476

Ordering number:EN3775A N-Channel Silicon MOSFET 2SK1474 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1474] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SK1474] 6.5 2.3 5.0 0.5 4 0.5 0.85

4.6. 2sk1475.pdf Size:120K _sanyo

2SK1476
2SK1476

Ordering number:EN3776A N-Channel Silicon MOSFET 2SK1475 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1475] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SK1475] 6.5 2.3 5.0 0.5 4 0.5 0.85

4.7. 2sk147.pdf Size:86K _sanyo

2SK1476
2SK1476

4.8. 2sk1473.pdf Size:123K _sanyo

2SK1476
2SK1476

Ordering number:EN3774 N-Channel Silicon MOSFET 2SK1473 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK1473] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbo

4.9. 2sk1478.pdf Size:33K _panasonic

2SK1476
2SK1476

Power F-MOS FETs 2SK1478 2SK1478 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on)= 0.4?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf = 44ns(typ) No secondary breakdown o3.1 0.1 High breakdown voltage, large allowable power dissipation Applications 1.3 0.2 Non-contact relay 1.4 0.1 Solenoid drive +0.2 0.5 -0.1 0.8

4.10. 2sk1478.pdf Size:192K _inchange_semiconductor

2SK1476
2SK1476

isc N-Channel MOSFET Transistor 2SK1478 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V =250V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V DSS GS V Gate-Source

4.11. 2sk1477.pdf Size:202K _inchange_semiconductor

2SK1476
2SK1476

isc N-Channel MOSFET Transistor 2SK1477 DESCRIPTION ·Drain Current –I =12A@ T =25℃ D C ·Drain Source Voltage- : V =500 (Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solen

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