2SK1476
 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
   Número de Parte: 2SK1476
   Tipo de FET: MOSFET
   Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
   Pdⓘ - Máxima disipación de potencia: 150
 W   
|Vds|ⓘ - Voltaje máximo drenador - fuente: 450
 V   
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
 V   
|Id|ⓘ - Corriente continua de drenaje: 12
 A   
Tjⓘ - Temperatura máxima de unión: 150
 °C
CARACTERÍSTICAS ELÉCTRICAS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65
 Ohm
		   Paquete / Cubierta: 
TO3PN
				
				  
				  Búsqueda de reemplazo de 2SK1476
 MOSFET
   - 
Selección ⓘ de transistores por parámetros
 
		
2SK1476
 Datasheet (PDF)
 ..1.  Size:202K  inchange semiconductor
 2sk1476.pdf 
 
						 
 
isc N-Channel MOSFET Transistor 2SK1476DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen
 8.2.  Size:120K  sanyo
 2sk1474.pdf 
 
						 
 
Ordering number:EN3775AN-Channel Silicon MOSFET2SK1474Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions  Low ON resistance.unit:mm  Ultrahigh-speed switching.2083B  Low-voltage drive.[2SK1474]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1474]6.5 2.35.0 0.540.5
 8.3.  Size:92K  sanyo
 2sk1471.pdf 
 
						 
 
Ordering number:EN3772AN-Channel Silicon MOSFET2SK1471Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions  Low ON resistance.unit:mm  Ultrahigh-speed switching.2083B  Low-voltage drive.[2SK1471]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1471]6.5 2.35.0 0.540.5
 8.4.  Size:123K  sanyo
 2sk1473.pdf 
 
						 
 
Ordering number:EN3774N-Channel Silicon MOSFET2SK1473Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions  Low ON resistance.unit:mm  Ultrahigh-speed switching.2062A  Low-voltage drive.[2SK1473]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParamete
 8.5.  Size:120K  sanyo
 2sk1475.pdf 
 
						 
 
Ordering number:EN3776AN-Channel Silicon MOSFET2SK1475Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions  Low ON resistance.unit:mm  Ultrahigh-speed switching.2083B  Low-voltage drive.[2SK1475]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1475]6.5 2.35.0 0.540.5
 8.7.  Size:97K  sanyo
 2sk1470.pdf 
 
						 
 
Ordering number:EN3771AN-Channel Silicon MOSFET2SK1470Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions  Low ON resistance.unit:mm  Ultrahigh-speed switching.2062A  Low-voltage drive.[2SK1470]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParamet
 8.8.  Size:119K  sanyo
 2sk1472.pdf 
 
						 
 
Ordering number:EN3773AN-Channel Silicon MOSFET2SK1472Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions  Low ON resistance.unit:mm  Ultrahigh-speed switching.2083B  Low-voltage drive.[2SK1472]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1472]6.5 2.35.0 0.540.5
 8.9.  Size:33K  panasonic
 2sk1478.pdf 
 
						 
 
Power F-MOS FETs 2SK14782SK1478Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)= 0.4(typ)5.5 0.2 2.7 0.2High-speed switching : tf = 44ns(typ)No secondary breakdown3.1 0.1High breakdown voltage, large allowable power dissipation Applications1.3 0.2Non-contact relay1.4 0.1Solenoid drive+0.20.5
 8.10.  Size:192K  inchange semiconductor
 2sk1478.pdf 
 
						 
 
isc N-Channel MOSFET Transistor 2SK1478DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Source
 8.11.  Size:202K  inchange semiconductor
 2sk1477.pdf 
 
						 
 
isc N-Channel MOSFET Transistor 2SK1477DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen
 Otros transistores... 2SK3608-01SJ
, 2SK3609-01
, AF1332N
, AF1333P
, 2SK1408
, 2SK1409
, 2SK1410
, 2SK1411
, 60N06
, 2SK1477
, 2SK1545
, 2SK1546
, 2SK1550
, 2SK3549-01
, 2SK3550-01R
, 2SK3554-01
, 2SK3555-01MR
.