2SK1477 Todos los transistores

 ..1. Size:202K  inchange semiconductor
 2sk1477.pdf

isc N-Channel MOSFET Transistor 2SK1477 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solen

 8.1. Size:59K  toshiba
 2sk147.pdf

 8.2. Size:120K  sanyo
 2sk1474.pdf

Ordering number EN3775A N-Channel Silicon MOSFET 2SK1474 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1474] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1474] 6.5 2.3 5.0 0.5 4 0.5

 8.3. Size:92K  sanyo
 2sk1471.pdf

Ordering number EN3772A N-Channel Silicon MOSFET 2SK1471 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1471] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1471] 6.5 2.3 5.0 0.5 4 0.5

 8.4. Size:123K  sanyo
 2sk1473.pdf

Ordering number EN3774 N-Channel Silicon MOSFET 2SK1473 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK1473] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Paramete

 8.5. Size:120K  sanyo
 2sk1475.pdf

Ordering number EN3776A N-Channel Silicon MOSFET 2SK1475 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1475] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1475] 6.5 2.3 5.0 0.5 4 0.5

 8.6. Size:86K  sanyo
 2sk147.pdf

 8.7. Size:97K  sanyo
 2sk1470.pdf

Ordering number EN3771A N-Channel Silicon MOSFET 2SK1470 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK1470] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Paramet

 8.8. Size:119K  sanyo
 2sk1472.pdf

Ordering number EN3773A N-Channel Silicon MOSFET 2SK1472 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1472] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1472] 6.5 2.3 5.0 0.5 4 0.5

 8.9. Size:33K  panasonic
 2sk1478.pdf

Power F-MOS FETs 2SK1478 2SK1478 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.4 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 44ns(typ) No secondary breakdown 3.1 0.1 High breakdown voltage, large allowable power dissipation Applications 1.3 0.2 Non-contact relay 1.4 0.1 Solenoid drive +0.2 0.5

 8.10. Size:192K  inchange semiconductor
 2sk1478.pdf

isc N-Channel MOSFET Transistor 2SK1478 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V DSS GS V Gate-Source

 8.11. Size:202K  inchange semiconductor
 2sk1476.pdf

isc N-Channel MOSFET Transistor 2SK1476 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solen