2SK3555-01MR Todos los transistores

 

2SK3555-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3555-01MR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 95 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 37 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 220 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO220F

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2SK3555-01MR Datasheet (PDF)

1.1. 2sk3555-01mr.pdf Size:113K _fuji

2SK3555-01MR
2SK3555-01MR

2SK3555-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unl

4.1. 2sk3556-01l-s-sj.pdf Size:266K _update

2SK3555-01MR
2SK3555-01MR

2SK3556-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unle

4.2. 2sk3557-6-tb-e.pdf Size:254K _update

2SK3555-01MR
2SK3555-01MR

2SK3557 Ordering number : EN7169A SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET High-Frequency Low-Noise 2SK3557 Amplifier Applications Applications • AM tuner RF amplification • Low noise amplifier Features • Large yfs | | • Small Ciss • Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer • Ultralow noise figure S

 4.3. 2sk3557.pdf Size:34K _sanyo

2SK3555-01MR
2SK3555-01MR

Ordering number : ENN7169 2SK3557 N-Channel Junction Silicon FET 2SK3557 Low-Noise HF Amplifier Applications Preliminary Applications Package Dimensions AM tuner RF amplifier. unit : mm Low noise amplifier. 2050A [2SK3557] Features Large ?yfs?. 0.4 0.16 3 Small Ciss. Ultrasmall-sized package permitting 2SK3557- 0 to 0.1 applied sets to be made smaller and slimer. Ult

4.4. 2sk3554-01.pdf Size:112K _fuji

2SK3555-01MR
2SK3555-01MR

2SK3554-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unl

 4.5. 2sk3550-01r.pdf Size:119K _fuji

2SK3555-01MR
2SK3555-01MR

2SK3550-01R 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless other

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