2SK3611-01MR Datasheet. Equivalente

 ..1. Size:106K  fuji
 2sk3611-01mr.pdf

2SK3611-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

 ..2. Size:279K  inchange semiconductor
 2sk3611-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3611-01MR FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 260m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 7.1. Size:104K  fuji
 2sk3611.pdf

2SK3611-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless oth

 8.1. Size:58K  1
 2sk3617.pdf

Ordering number ENN8112 2SK3617 N-Channel Silicon MOSFET 2SK3617 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 6 A Drai

 8.2. Size:35K  1
 2sk3618.pdf

Ordering number ENN8325 2SK3618 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3618 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 8 A Dra

 8.3. Size:28K  sanyo
 2sk3614.pdf

Ordering number ENN7422 2SK3614 N-Channel Silicon MOSFET 2SK3614 UltraHigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3614] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate (Bottom view) 2 Drain 0.75 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta

 8.4. Size:37K  sanyo
 2sk3615.pdf

Ordering number ENN8332 2SK3615 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3615 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 12 A Dra

 8.5. Size:243K  fuji
 2sk3612-01l-s-sj.pdf

2SK3612-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 8.6. Size:103K  fuji
 2sk3610-01.pdf

2SK3610-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 8.7. Size:107K  fuji
 2sk3613-01.pdf

2SK3613-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Foot Print Pattern Absolute maximum ratings (

 8.8. Size:282K  inchange semiconductor
 2sk3612l.pdf

isc N-Channel MOSFET Transistor 2SK3612L FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 260m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.9. Size:354K  inchange semiconductor
 2sk3615i.pdf

isc N-Channel MOSFET Transistor 2SK3615I FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.10. Size:287K  inchange semiconductor
 2sk3617d.pdf

isc N-Channel MOSFET Transistor 2SK3617D FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 225m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.11. Size:286K  inchange semiconductor
 2sk3615d.pdf

isc N-Channel MOSFET Transistor 2SK3615D FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.12. Size:287K  inchange semiconductor
 2sk3618d.pdf

isc N-Channel MOSFET Transistor 2SK3618D FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.13. Size:289K  inchange semiconductor
 2sk3610-01.pdf

isc N-Channel MOSFET Transistor 2SK3610-01 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 260m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.14. Size:356K  inchange semiconductor
 2sk3612s.pdf

isc N-Channel MOSFET Transistor 2SK3612S FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 260m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.15. Size:355K  inchange semiconductor
 2sk3618i.pdf

isc N-Channel MOSFET Transistor 2SK3618I FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.16. Size:355K  inchange semiconductor
 2sk3617i.pdf

isc N-Channel MOSFET Transistor 2SK3617I FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 225m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno