2SK3613-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3613-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.7 nS
   Cossⓘ - Capacitancia de salida: 88 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TFP

Búsqueda de reemplazo de MOSFET 2SK3613-01

2SK3613-01 Datasheet (PDF)

..1. Size:107K fuji
2sk3613-01.pdf

2SK3613-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicFoot Print PatternAbsolute maximum ratings(

8.1. Size:58K 1
2sk3617.pdf

Ordering number : ENN8112 2SK3617N-Channel Silicon MOSFET2SK3617 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 6 ADrai

8.2. Size:35K 1
2sk3618.pdf

Ordering number : ENN8325 2SK3618N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3618ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 8 ADra

8.3. Size:28K sanyo
2sk3614.pdf

Ordering number : ENN74222SK3614N-Channel Silicon MOSFET2SK3614UltraHigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive.[2SK3614]4.51.51.60.4 0.53 2 10.41.53.01 : Gate(Bottom view)2 : Drain0.753 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta

8.4. Size:37K sanyo
2sk3615.pdf

Ordering number : ENN8332 2SK3615N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3615ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 12 ADra

8.5. Size:243K fuji
2sk3612-01l-s-sj.pdf

2SK3612-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsP4Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

8.6. Size:106K fuji
2sk3611-01mr.pdf

2SK3611-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un

8.7. Size:104K fuji
2sk3611.pdf

2SK3611-01MRFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless oth

8.8. Size:103K fuji
2sk3610-01.pdf

2SK3610-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

8.9. Size:282K inchange semiconductor
2sk3612l.pdf

isc N-Channel MOSFET Transistor 2SK3612LFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.10. Size:354K inchange semiconductor
2sk3615i.pdf

isc N-Channel MOSFET Transistor 2SK3615IFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.11. Size:279K inchange semiconductor
2sk3611-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3611-01MRFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

8.12. Size:287K inchange semiconductor
2sk3617d.pdf

isc N-Channel MOSFET Transistor 2SK3617DFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 225m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.13. Size:286K inchange semiconductor
2sk3615d.pdf

isc N-Channel MOSFET Transistor 2SK3615DFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.14. Size:287K inchange semiconductor
2sk3618d.pdf

isc N-Channel MOSFET Transistor 2SK3618DFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.15. Size:289K inchange semiconductor
2sk3610-01.pdf

isc N-Channel MOSFET Transistor 2SK3610-01FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.16. Size:356K inchange semiconductor
2sk3612s.pdf

isc N-Channel MOSFET Transistor 2SK3612SFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.17. Size:355K inchange semiconductor
2sk3618i.pdf

isc N-Channel MOSFET Transistor 2SK3618IFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.18. Size:355K inchange semiconductor
2sk3617i.pdf

isc N-Channel MOSFET Transistor 2SK3617IFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 225m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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