2SK3644-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3644-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 41 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 13 nC
Tiempo de subida (tr): 23 nS
Conductancia de drenaje-sustrato (Cd): 280 pF
Resistencia entre drenaje y fuente RDS(on): 0.044 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET 2SK3644-01
2SK3644-01 Datasheet (PDF)
2sk3644-01.pdf
2SK3644-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3644-01.pdf
isc N-Channel MOSFET Transistor 2SK3644-01FEATURESDrain Current : I = 41A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3642.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3642SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low PART NUMBER PACKAGE on-state resistance and excellent switching characteristics, and 2SK3642-ZK TO-252 (MP-3ZK)designed for low voltage high current applications such as DC/DC converter with synchronou
2sk3648-01.pdf
2SK3648-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3649-01mr.pdf
2SK3649-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
2sk3646-01l-s-sj.pdf
2SK3646-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3647-01.pdf
2SK3647-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsFoot Print Pattern(
2sk3645-01mr.pdf
2SK3645-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
2sk3643.pdf
SMD Type ICSMD Type TransistorsSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICProduct specification2SK3643TO-252Unit: mm+0.16.50+0.15 2.30-0.1-0.15Features+0.85.30+0.2 0.50-0.7-0.2Low on-state resistanceRDS(on)1 =6 m MAX. (VGS =10 V, ID =32A)RDS(on)2 =9 m MAX. (VGS =4.5 V, ID =32 A) 0.12
2sk3641.pdf
SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3641TO-252Unit: mm+0.16.50+0.15 2.30-0.1-0.15Features+0.85.30+0.2 0.50-0.7-0.2Low on-state resistanceRDS(on)1 =14 m MAX. (VGS =10 V, ID =18A)0.127RDS(on)2 =25 m MAX. (VGS =4.5 V, ID =15 A)0.80+0.1 max-0.1Low Ciss: Ciss = 930 pF TYP.2.3 0.60+0.1 1Gate-0.1+0.154.60-0.152Drain3SourceAbsolute
2sk3640.pdf
SMD Type ICSMD Type TransistorsMOS Field Effect Transistor2SK3640TO-252Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1Features+0.25.30-0.2 0.50+0.8-0.7Low on-state resistanceRDS(on)1 =21m MAX. (VGS =10 V, ID =9A)RDS(on)2 =40m MAX. (VGS =4.5 V, ID =9 A)0.1270.80+0.1 max-0.1Low Ciss: Ciss = 570 pF TYP.Built-in gate protection diode1. Gate2.3 0.60+0.1-0.14.60+0.1
2sk3646l.pdf
isc N-Channel MOSFET Transistor 2SK3646LFEATURESDrain Current : I = 41A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3646s.pdf
isc N-Channel MOSFET Transistor 2SK3646SFEATURESDrain Current : I = 41A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3648-01.pdf
isc N-Channel MOSFET Transistor 2SK3648-01FEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3649-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3649-01MRFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
2sk3645-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3645-01MRFEATURESDrain Current : I = 41A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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