2SK3882-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3882-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 600 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 140 nC
Tiempo de subida (tr): 150 nS
Conductancia de drenaje-sustrato (Cd): 935 pF
Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET 2SK3882-01
2SK3882-01 Datasheet (PDF)
2sk3882-01.pdf
SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK3882-01Spec. No. :MS5F5909Date :Sep.-16-2004NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Sep.-16-'04CHECKED Sep.-16-'04MS5F5909 1 / 18Sep.-16-'04CHECKEDH04-004-05Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuji
2sk3882-01.pdf
isc N-Channel MOSFET Transistor 2SK3882-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk3880.pdf
2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3880 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute
2sk3886-01mr.pdf
SPECIFICATIONPower MOSFETDevice Name :2SK3886-01MRType Name :MS5F5814Spec. No. :Jun-28-2004Date :NAMEDATE APPROVEDDRAWNJun-28-'04CHECKEDJun-28-'041 / 18MS5F5814CHECKED Jun-28-'04H04-004-05This m aterial and the inform ation herein is the p roperty of Fuji ElectricDevice Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent,or disclosed in
2sk3888-01mr.pdf
2SK3888-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
2sk3887-01.pdf
2SK3887-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3883-01.pdf
SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK3883-01Spec. No. :MS5F5910Date :Sep.-16-2004NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWNSep.-16-'04CHECKEDSep.-16-'04MS5F5910 1 / 18CHECKED Sep.-16-'04H04-004-05Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuj
2sk3889-01l-s-sj.pdf
2SK3889-01L,S,SJN-CHANNEL SILICON POWER MOSFET200406Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings
2sk3885-01.pdf
SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK3885-01Spec. No. :MS5F5912Date :Sep.-16-2004NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Sep.-16-'04CHECKED Sep.-16-'04MS5F5912 1 / 18Sep.-16-'04CHECKEDH04-004-05This m aterial and the inform ation herein is the p roperty of Fuji ElectricDevice Technology Co.,Ltd. They s hall be neither rep
2sk3884-01.pdf
SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK3884-01Spec. No. :MS5F5911Date :Sep.-16-2004NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Sep.-16-'04CHECKED Sep.-16-'04MS5F5911 1 / 18Sep.-16-'04CHECKEDH04-004-05This m aterial and the inform ation herein is the p roperty of Fuji ElectricDevice Technology Co.,Ltd. They s hall be neither rep
2sk3886-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3886-01MRFEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk3887-01.pdf
isc N-Channel MOSFET Transistor 2SK3887-01FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk3889s.pdf
isc N-Channel MOSFET Transistor 2SK3889SFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
2sk3880.pdf
isc N-Channel MOSFET Transistor 2SK3880FEATURESDrain Current : I = 6.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
2sk3889l.pdf
isc N-Channel MOSFET Transistor 2SK3889LFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
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