2SK3885-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3885-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 600 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 86 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 140 nC
   trⓘ - Tiempo de subida: 102 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET 2SK3885-01

2SK3885-01 Datasheet (PDF)

..1. Size:372K fuji
2sk3885-01.pdf

SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK3885-01Spec. No. :MS5F5912Date :Sep.-16-2004NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Sep.-16-'04CHECKED Sep.-16-'04MS5F5912 1 / 18Sep.-16-'04CHECKEDH04-004-05This m aterial and the inform ation herein is the p roperty of Fuji ElectricDevice Technology Co.,Ltd. They s hall be neither rep

8.1. Size:280K toshiba
2sk388.pdf

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

8.2. Size:245K toshiba
2sk3880.pdf

2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3880 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute

8.3. Size:408K fuji
2sk3886-01mr.pdf

SPECIFICATIONPower MOSFETDevice Name :2SK3886-01MRType Name :MS5F5814Spec. No. :Jun-28-2004Date :NAMEDATE APPROVEDDRAWNJun-28-'04CHECKEDJun-28-'041 / 18MS5F5814CHECKED Jun-28-'04H04-004-05This m aterial and the inform ation herein is the p roperty of Fuji ElectricDevice Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent,or disclosed in

8.4. Size:416K fuji
2sk3882-01.pdf

SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK3882-01Spec. No. :MS5F5909Date :Sep.-16-2004NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Sep.-16-'04CHECKED Sep.-16-'04MS5F5909 1 / 18Sep.-16-'04CHECKEDH04-004-05Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuji

8.5. Size:95K fuji
2sk3888-01mr.pdf

2SK3888-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25

8.6. Size:93K fuji
2sk3887-01.pdf

2SK3887-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

8.7. Size:422K fuji
2sk3883-01.pdf

SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK3883-01Spec. No. :MS5F5910Date :Sep.-16-2004NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWNSep.-16-'04CHECKEDSep.-16-'04MS5F5910 1 / 18CHECKED Sep.-16-'04H04-004-05Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuj

8.8. Size:153K fuji
2sk3889-01l-s-sj.pdf

2SK3889-01L,S,SJN-CHANNEL SILICON POWER MOSFET200406Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings

8.9. Size:394K fuji
2sk3884-01.pdf

SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK3884-01Spec. No. :MS5F5911Date :Sep.-16-2004NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Sep.-16-'04CHECKED Sep.-16-'04MS5F5911 1 / 18Sep.-16-'04CHECKEDH04-004-05This m aterial and the inform ation herein is the p roperty of Fuji ElectricDevice Technology Co.,Ltd. They s hall be neither rep

8.10. Size:331K inchange semiconductor
2sk3886-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3886-01MRFEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

8.11. Size:330K inchange semiconductor
2sk3882-01.pdf

isc N-Channel MOSFET Transistor 2SK3882-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

8.12. Size:289K inchange semiconductor
2sk3887-01.pdf

isc N-Channel MOSFET Transistor 2SK3887-01FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

8.13. Size:357K inchange semiconductor
2sk3889s.pdf

isc N-Channel MOSFET Transistor 2SK3889SFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

8.14. Size:274K inchange semiconductor
2sk3880.pdf

isc N-Channel MOSFET Transistor 2SK3880FEATURESDrain Current : I = 6.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

8.15. Size:283K inchange semiconductor
2sk3889l.pdf

isc N-Channel MOSFET Transistor 2SK3889LFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

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