2SK3888-01MR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3888-01MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 6 nS
Cossⓘ - Capacitancia de salida: 130 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de 2SK3888-01MR MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3888-01MR datasheet
..1. Size:95K fuji
2sk3888-01mr.pdf 
2SK3888-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25
8.1. Size:280K toshiba
2sk388.pdf 
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com
8.2. Size:245K toshiba
2sk3880.pdf 
2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3880 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.2 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 640 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute
8.3. Size:408K fuji
2sk3886-01mr.pdf 
SPECIFICATION Power MOSFET Device Name 2SK3886-01MR Type Name MS5F5814 Spec. No. Jun-28-2004 Date NAME DATE APPROVED DRAWN Jun-28-'04 CHECKED Jun-28-'04 1 / 18 MS5F5814 CHECKED Jun-28-'04 H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in
8.4. Size:416K fuji
2sk3882-01.pdf 
SPECIFICATION Device Name Power MOSFET Type Name 2SK3882-01 Spec. No. MS5F5909 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5909 1 / 18 Sep.-16-'04 CHECKED H04-004-05 Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuji
8.5. Size:93K fuji
2sk3887-01.pdf 
2SK3887-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C
8.6. Size:422K fuji
2sk3883-01.pdf 
SPECIFICATION Device Name Power MOSFET Type Name 2SK3883-01 Spec. No. MS5F5910 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5910 1 / 18 CHECKED Sep.-16-'04 H04-004-05 Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuj
8.7. Size:153K fuji
2sk3889-01l-s-sj.pdf 
2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET 200406 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings
8.8. Size:372K fuji
2sk3885-01.pdf 
SPECIFICATION Device Name Power MOSFET Type Name 2SK3885-01 Spec. No. MS5F5912 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5912 1 / 18 Sep.-16-'04 CHECKED H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither rep
8.9. Size:394K fuji
2sk3884-01.pdf 
SPECIFICATION Device Name Power MOSFET Type Name 2SK3884-01 Spec. No. MS5F5911 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5911 1 / 18 Sep.-16-'04 CHECKED H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither rep
8.10. Size:331K inchange semiconductor
2sk3886-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3886-01MR FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.11. Size:330K inchange semiconductor
2sk3882-01.pdf 
isc N-Channel MOSFET Transistor 2SK3882-01 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.12. Size:289K inchange semiconductor
2sk3887-01.pdf 
isc N-Channel MOSFET Transistor 2SK3887-01 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.13. Size:357K inchange semiconductor
2sk3889s.pdf 
isc N-Channel MOSFET Transistor 2SK3889S FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
8.14. Size:274K inchange semiconductor
2sk3880.pdf 
isc N-Channel MOSFET Transistor 2SK3880 FEATURES Drain Current I = 6.5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB
8.15. Size:283K inchange semiconductor
2sk3889l.pdf 
isc N-Channel MOSFET Transistor 2SK3889L FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
Otros transistores... 2SK1082-01
, 2SK1102-01MR
, 2SK3882-01
, 2SK3883-01
, 2SK3884-01
, 2SK3885-01
, 2SK3886-01MR
, 2SK3887-01
, 8205A
, 2SK3913-01MR
, 2SK3914-01
, 2SK3915-01MR
, 2SK3916-01
, 2SK3917-01MR
, 2SK2755-01
, 2SK2756-01R
, 2SK2759-01R
.
History: H10N65P
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