IRFBA35N60C Todos los transistores

 

IRFBA35N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFBA35N60C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 6 V
   Qgⓘ - Carga de la puerta: 280(max) nC
   trⓘ - Tiempo de subida: 89 nS
   Cossⓘ - Capacitancia de salida: 3030 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SUPER220
 

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IRFBA35N60C Datasheet (PDF)

 ..1. Size:48K  international rectifier
 irfba35n60c.pdf pdf_icon

IRFBA35N60C

PD - 93800APROVISIONALIRFBA35N60CSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.080 35A High Speed Power SwitchingBenefits Low Gate Charge Qg Reduces DriveRequired Improved Gate Resistance for FasterSwitching Fully Characterized Capacitance andAvalanche Voltage and Current Sup

 8.1. Size:41K  international rectifier
 irfba31n50l.pdf pdf_icon

IRFBA35N60C

PD- 93925PROVISIONALIRFBA31N50LSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) ID Telecom and Data-Com off-Line SMPS Motor Control500V 0.152 31A UninterruptIble Power SupplyBenefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to ImprovedGate Charge Characteristics Built in Fast Recovery Diode Improved Avalanche Ruggedness and

 8.2. Size:41K  international rectifier
 irfba32n50k.pdf pdf_icon

IRFBA35N60C

PD- 93924PROVISIONALIRFBA32N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply500V 0.14 32ABenefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to ImprovedGate Charge Characteristics Improved Avalanche Ruggedness andDynamic dv/dt, Fully CharacterizedAvalanche Vo

 8.3. Size:53K  international rectifier
 irfba34n50c.pdf pdf_icon

IRFBA35N60C

PD- 93931PROVISIONALIRFBA34N50CSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.070 40A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andSuper-220

MOSTRAR MÁS

Otros transistores... IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A , IRFBA1404 , IRFBA22N50A , STP80NF70 , IRFBC20 , IRFBC20L , IRFBC20S , IRFBC30 , IRFBC30A , IRFBC30AS , IRFBC30L , IRFBC30S .

History: MMBFU310L

 

 
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