IRFBA35N60C Todos los transistores

 

IRFBA35N60C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFBA35N60C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 89 nS

Cossⓘ - Capacitancia de salida: 3030 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SUPER220

 Búsqueda de reemplazo de IRFBA35N60C MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFBA35N60C datasheet

 ..1. Size:48K  international rectifier
 irfba35n60c.pdf pdf_icon

IRFBA35N60C

PD - 93800A PROVISIONAL IRFBA35N60C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.080 35A High Speed Power Switching Benefits Low Gate Charge Qg Reduces Drive Required Improved Gate Resistance for Faster Switching Fully Characterized Capacitance and Avalanche Voltage and Current Sup

 8.1. Size:41K  international rectifier
 irfba31n50l.pdf pdf_icon

IRFBA35N60C

PD- 93925 PROVISIONAL IRFBA31N50L SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS Motor Control 500V 0.152 31A UninterruptIble Power Supply Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Built in Fast Recovery Diode Improved Avalanche Ruggedness and

 8.2. Size:41K  international rectifier
 irfba32n50k.pdf pdf_icon

IRFBA35N60C

PD- 93924 PROVISIONAL IRFBA32N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.14 32A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Vo

 8.3. Size:53K  international rectifier
 irfba34n50c.pdf pdf_icon

IRFBA35N60C

PD- 93931 PROVISIONAL IRFBA34N50C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.070 40A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-220

MOSTRAR MÁS

Otros transistores... IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A , IRFBA1404 , IRFBA22N50A , 10N65 , IRFBC20 , IRFBC20L , IRFBC20S , IRFBC30 , IRFBC30A , IRFBC30AS , IRFBC30L , IRFBC30S .

History: ZXMHC6A07T8 | ATP113

 

 

 


 
↑ Back to Top
.