2SK1212-01R Todos los transistores

 ..1. Size:170K  fuji
 2sk1212-01r.pdf

 7.1. Size:203K  inchange semiconductor
 2sk1212.pdf

isc N-Channel MOSFET Transistor 2SK1212 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta

 8.1. Size:140K  renesas
 2sk1215.pdf

2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 (Previous ADE-208-1176) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code PTSP0003ZA-A (Package name CMPAK R ) 3 1. Gate 2. Drain 1 3. Source 2 *CMPAK is a trademark of Renesas Technology Corp. Rev.2.00 Aug 10, 2005 page 1 of 5 2SK1215 Absolute Maximum Ratings (Ta = 25 C) Item Sym

 8.2. Size:260K  renesas
 2sk1215f.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:34K  panasonic
 2sk1214.pdf

Power F-MOS FETs 2SK1214 2SK1214 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)1= 0.06 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf =110ns(typ) No secondary breakdown 3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Mot

 8.4. Size:63K  fuji
 2sk1211.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1211 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltag

 8.5. Size:94K  fuji
 2sk1211-01.pdf

 8.6. Size:170K  fuji
 2sk1217-01r.pdf

 8.7. Size:64K  inchange semiconductor
 2sk1217.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1217 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V

 8.8. Size:61K  inchange semiconductor
 2sk1213.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1213 DESCRIPTION Drain Current ID=6A@ TC=25 Drain Source Voltage- VDSS=600V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V

 8.9. Size:202K  inchange semiconductor
 2sk1211.pdf

isc N-Channel MOSFET Transistor 2SK1211 DESCRIPTION Drain Current I =2.5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)