2SK3986-01MR Todos los transistores

 ..1. Size:294K  fuji
 2sk3986-01mr.pdf

2SK3986-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 ..2. Size:280K  inchange semiconductor
 2sk3986-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3986-01MR FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.1. Size:284K  1
 2sk398.pdf

 8.2. Size:262K  nec
 2sk3984-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:300K  fuji
 2sk3987-01l-01s-01sj.pdf

2SK3987-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 8.4. Size:221K  fuji
 2sk3981-01.pdf

2SK3981-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc

 8.5. Size:294K  fuji
 2sk3989-01mr.pdf

2SK3989-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified)

 8.6. Size:234K  fuji
 2sk3983-01l-s-sj.pdf

2SK3983-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 8.7. Size:292K  fuji
 2sk3985-01.pdf

2SK3985-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless

 8.8. Size:221K  fuji
 2sk3982-01mr.pdf

2SK3982-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance TO-220F No secondary breadown Low driving power Avalanche-proof High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (T

 8.9. Size:292K  fuji
 2sk3988-01.pdf

2SK3988-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless

 8.10. Size:357K  inchange semiconductor
 2sk3983-01s.pdf

isc N-Channel MOSFET Transistor 2SK3983-01S FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.11. Size:357K  inchange semiconductor
 2sk3987-01s.pdf

isc N-Channel MOSFET Transistor 2SK3987-01S FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.12. Size:276K  inchange semiconductor
 2sk398.pdf

isc N-Channel MOSFET Transistor 2SK398 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:289K  inchange semiconductor
 2sk3981-01.pdf

isc N-Channel MOSFET Transistor 2SK3981-01 FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.14. Size:289K  inchange semiconductor
 2sk3989-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3989-01MR FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.15. Size:283K  inchange semiconductor
 2sk3983-01l.pdf

isc N-Channel MOSFET Transistor 2SK3983-01L FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.16. Size:289K  inchange semiconductor
 2sk3985-01.pdf

isc N-Channel MOSFET Transistor 2SK3985-01 FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.17. Size:283K  inchange semiconductor
 2sk3987-01l.pdf

isc N-Channel MOSFET Transistor 2SK3987-01L FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.18. Size:357K  inchange semiconductor
 2sk3983-01sj.pdf

isc N-Channel MOSFET Transistor 2SK3983-01SJ FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.19. Size:280K  inchange semiconductor
 2sk3982-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3982-01MR FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.20. Size:289K  inchange semiconductor
 2sk3988-01.pdf

isc N-Channel MOSFET Transistor 2SK3988-01 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol