2SK3870-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3870-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 270 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 230 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.076 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET 2SK3870-01

2SK3870-01 Datasheet (PDF)

..1. Size:95K fuji
2sk3870-01.pdf

2SK3870-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

7.1. Size:286K inchange semiconductor
2sk3870.pdf

isc N-Channel MOSFET Transistor 2SK3870FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 230V(Min)DSSStatic Drain-Source On-Resistance: R = 76m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

8.1. Size:227K toshiba
2sk3878.pdf

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

8.2. Size:292K toshiba
2sk3879.pdf

2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3879 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolu

8.3. Size:153K fuji
2sk3872-01l-s-sj.pdf

2SK3872-01L,S,SJN-CHANNEL SILICON POWER MOSFET200406Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings

8.4. Size:96K fuji
2sk3871-01mr.pdf

2SK3871-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25

8.5. Size:101K fuji
2sk3875-01.pdf

2SK3875-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other

8.6. Size:100K fuji
2sk3876-01r.pdf

2SK3876-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless othe

8.7. Size:109K fuji
2sk3874-01r.pdf

2SK3874-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless o

8.8. Size:112K fuji
2sk3873-01.pdf

2SK3873-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other

8.9. Size:216K inchange semiconductor
2sk3878.pdf

isc N-Channel Mosfet Transistor 2SK3878FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a

8.10. Size:283K inchange semiconductor
2sk3872-01l.pdf

isc N-Channel MOSFET Transistor 2SK3872-01LFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 230V(Min)DSSStatic Drain-Source On-Resistance: R = 76m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

8.11. Size:286K inchange semiconductor
2sk3872-01s.pdf

isc N-Channel MOSFET Transistor 2SK3872-01SFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 230V(Min)DSSStatic Drain-Source On-Resistance: R = 76m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

8.12. Size:330K inchange semiconductor
2sk3875-01.pdf

isc N-Channel MOSFET Transistor 2SK3875-01FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

8.13. Size:235K inchange semiconductor
2sk387.pdf

isc N-Channel MOSFET Transistor 2SK387DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed applications.such as off-line switching power supplies , UPS,AC and DCmotor controls,rel

8.14. Size:274K inchange semiconductor
2sk3874-01r.pdf

isc N-Channel MOSFET Transistor 2SK3874-01RFEATURESDrain Current : I = 56A@ T =25D CDrain Source Voltage: V = 280V(Min)DSSStatic Drain-Source On-Resistance: R = 61m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

8.15. Size:283K inchange semiconductor
2sk3873-01.pdf

isc N-Channel MOSFET Transistor 2SK3873-01FEATURESDrain Current : I = 56A@ T =25D CDrain Source Voltage: V = 280V(Min)DSSStatic Drain-Source On-Resistance: R = 61m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

8.16. Size:357K inchange semiconductor
2sk3879.pdf

isc N-Channel MOSFET Transistor 2SK3879FEATURESDrain Current : I = 6.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

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