2SK3532-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3532-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

isc N-Channel MOSFET Transistor 2SK3532-01MRFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

2SK3532-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3538 Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: R = 75 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: I = 100 A (V = 500 V) DSS DS Enhancement-mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 m

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3539Silicon N-channel MOSFETUnit: mmFor switching0.15+0.100.3+0.10.050.03 Features High-speed switching Wide frequency band1 2 Gate protection diode built-in(0.65) (0.65)1.30.12.00.2 Absolute Maximum Ratings Ta = 25C10Parameter Sym

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3539GSilicon N-channel MOSFETFor switching Package Features Code High-speed switchingSMini3-F2 Wide frequency band Marking Symbol: 5F Gate protection diode built-in Pin Name1: Gate2: Source Absolute Maximum Ratings Ta = 25C3: DrainParame

2SK3533-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

2SK3530-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

2SK3531-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

FUJI POWER MOSFET2SK3535-01200304Super FAP-G Series N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsfor SwitchingFoot Print PatternAbsolute Maximum Ratings at Tc=25C( unless otherwise specified)Item Symbol Ratings Unit Remarks Equivalent circuit sche

2SK3534-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

2SK3537-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un

isc N-Channel MOSFET Transistor 2SK3533-01FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3530FEATURESWith TO-220F packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

isc N-Channel MOSFET Transistor 2SK3531-01FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3534-01MRFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor 2SK3537-01MRFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so