IRFBC30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFBC30
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 31(max) nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO220AB

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IRFBC30 Datasheet (PDF)

..1. Size:1081K international rectifier
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PD- 95417IRFBC30PbF Lead-Free06/16/04Document Number: 91110 www.vishay.com1IRFBC30PbFDocument Number: 91110 www.vishay.com2IRFBC30PbFDocument Number: 91110 www.vishay.com3IRFBC30PbFDocument Number: 91110 www.vishay.com4IRFBC30PbFDocument Number: 91110 www.vishay.com5IRFBC30PbFDocument Number: 91110 www.vishay.com6IRFBC30PbFDocument Number: 91

..2. Size:173K international rectifier
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..3. Size:93K st
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IRFBC30 N - CHANNEL 600V - 1.8 - 3.6 A - TO-220PowerMESH MOSFETTYPE VDSS RDS(on) IDIRFBC30 600 V

..4. Size:1805K vishay
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IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

..5. Size:1808K vishay
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..6. Size:1757K infineon
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..7. Size:284K inchange semiconductor
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iscN-Channel MOSFET Transistor IRFBC30FEATURESLow drain-source on-resistance:RDS(ON) =2.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

0.1. Size:193K international rectifier
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PD - 95700SMPS MOSFETIRFBC30APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 600V 2.2 3.6Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanc

0.2. Size:302K international rectifier
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PD- 95534SMPS MOSFETIRFBC30AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 600V 2.2 3.6Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan

0.3. Size:375K international rectifier
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PD - 95544IRFBC30S/LPbF Lead-Free7/21/04Document Number: 91111 www.vishay.com1IRFBC30S/LPbFDocument Number: 91111 www.vishay.com2IRFBC30S/LPbFDocument Number: 91111 www.vishay.com3IRFBC30S/LPbFDocument Number: 91111 www.vishay.com4IRFBC30S/LPbFDocument Number: 91111 www.vishay.com5IRFBC30S/LPbFDocument Number: 91111 www.vishay.com6IRFBC30S/LPbF

0.4. Size:362K international rectifier
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PD - 9.1015IRFBC30S/LPRELIMINARYHEXFET Power MOSFET Surface Mount (IRFBC30S)D Low-profile through-hole (IRFBC30L) VDSS = 600V Available in Tape & Reel (IRFBC30S) Dynamic dv/dt RatingRDS(on) = 2.2 150C Operating TemperatureG Fast SwitchingID = 3.6A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer

0.5. Size:147K international rectifier
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PD- 91890BSMPS MOSFETIRFBC30AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 600V 2.2 3.6A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

0.6. Size:216K vishay
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IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

0.7. Size:287K vishay
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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S)RDS(on) ()VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt RatingQgs

0.8. Size:261K vishay
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IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca

0.9. Size:264K vishay
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0.10. Size:235K vishay
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0.11. Size:215K vishay
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0.12. Size:2529K cn vbsemi
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IRFBC30Pwww.VBsemi.twN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Co

0.13. Size:284K inchange semiconductor
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iscN-Channel MOSFET Transistor IRFBC30AFEATURESLow drain-source on-resistance:RDS(ON) =2.2 (MAX)Enhancement mode:Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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