IRFBC30 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFBC30
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 74 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 13 nS
Cossⓘ - Capacitancia de salida: 86 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de IRFBC30 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFBC30 datasheet
..1. Size:1081K international rectifier
irfbc30pbf.pdf 
PD- 95417 IRFBC30PbF Lead-Free 06/16/04 Document Number 91110 www.vishay.com 1 IRFBC30PbF Document Number 91110 www.vishay.com 2 IRFBC30PbF Document Number 91110 www.vishay.com 3 IRFBC30PbF Document Number 91110 www.vishay.com 4 IRFBC30PbF Document Number 91110 www.vishay.com 5 IRFBC30PbF Document Number 91110 www.vishay.com 6 IRFBC30PbF Document Number 91
..3. Size:93K st
irfbc30.pdf
IRFBC30 N - CHANNEL 600V - 1.8 - 3.6 A - TO-220 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRFBC30 600 V
..4. Size:1805K vishay
irfbc30 sihfbc30.pdf
IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE
..5. Size:1808K vishay
irfbc30pbf sihfbc30.pdf
IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE
..6. Size:1757K infineon
irfbc30 sihfbc30.pdf
IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE
..7. Size:284K inchange semiconductor
irfbc30.pdf
iscN-Channel MOSFET Transistor IRFBC30 FEATURES Low drain-source on-resistance RDS(ON) =2.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
0.1. Size:193K international rectifier
irfbc30a.pdf
PD - 95700 SMPS MOSFET IRFBC30APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 600V 2.2 3.6A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanc
0.2. Size:302K international rectifier
irfbc30aspbf irfbc30alpbf.pdf
PD- 95534 SMPS MOSFET IRFBC30AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 600V 2.2 3.6A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan
0.3. Size:375K international rectifier
irfbc30spbf irfbc30lpbf.pdf
PD - 95544 IRFBC30S/LPbF Lead-Free 7/21/04 Document Number 91111 www.vishay.com 1 IRFBC30S/LPbF Document Number 91111 www.vishay.com 2 IRFBC30S/LPbF Document Number 91111 www.vishay.com 3 IRFBC30S/LPbF Document Number 91111 www.vishay.com 4 IRFBC30S/LPbF Document Number 91111 www.vishay.com 5 IRFBC30S/LPbF Document Number 91111 www.vishay.com 6 IRFBC30S/LPbF
0.4. Size:362K international rectifier
irfbc30s irfbc30l.pdf
PD - 9.1015 IRFBC30S/L PRELIMINARY HEXFET Power MOSFET Surface Mount (IRFBC30S) D Low-profile through-hole (IRFBC30L) VDSS = 600V Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating RDS(on) = 2.2 150 C Operating Temperature G Fast Switching ID = 3.6A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer
0.5. Size:147K international rectifier
irfbc30as irfbc30al.pdf
PD- 91890B SMPS MOSFET IRFBC30AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 600V 2.2 3.6A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre
0.6. Size:216K vishay
irfbc30apbf sihfbc30a.pdf
IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur
0.7. Size:287K vishay
irfbc30lpbf irfbc30spbf.pdf
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs
0.8. Size:261K vishay
irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca
0.9. Size:264K vishay
irfbc30s sihfbc30s irfbc30l sihfbc30l.pdf
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs
0.10. Size:235K vishay
irfbc30al irfbc30alpbf irfbc30aspbf.pdf
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca
0.11. Size:215K vishay
irfbc30a sihfbc30a.pdf
IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur
0.12. Size:2529K cn vbsemi
irfbc30p.pdf
IRFBC30P www.VBsemi.tw N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.7 RoHS Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Co
0.13. Size:284K inchange semiconductor
irfbc30a.pdf
iscN-Channel MOSFET Transistor IRFBC30A FEATURES Low drain-source on-resistance RDS(ON) =2.2 (MAX) Enhancement mode Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
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