2SK792
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK792
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 900
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 3
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55
nS
Cossⓘ - Capacitancia
de salida: 120
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5
Ohm
Paquete / Cubierta:
TO220AB
- Selección de transistores por parámetros
2SK792
Datasheet (PDF)
9.5. Size:145K panasonic
2sk795.pdf 
"2SK795""2SK795"
9.7. Size:197K inchange semiconductor
2sk796a.pdf
isc N-Channel MOSFET Transistor 2SK796ADESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.8. Size:204K inchange semiconductor
2sk794.pdf
isc N-Channel MOSFET Transistor 2SK794DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.9. Size:197K inchange semiconductor
2sk796.pdf
isc N-Channel MOSFET Transistor 2SK796DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.10. Size:247K inchange semiconductor
2sk790.pdf
isc N-Channel MOSFET Transistor 2SK790DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.11. Size:237K inchange semiconductor
2sk793.pdf
isc N-Channel MOSFET Transistor 2SK793DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =850V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, convert
Otros transistores... 2SK3788-01
, 2SK3789-01R
, 2SK3753-01R
, 2SK727
, 2SK770
, 2SK773
, 2SK774
, 2SK791
, IRLZ44N
, 2SK794
, 2SK795
, 2SK382
, 2SK351
, 2SK1074
, 2SK1079
, 2SK1089
, 2SK1105-R
.
History: IXTP50N28T
| 3SK249
