2SK1105-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1105-R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MOSFET 2SK1105-R
2SK1105-R Datasheet (PDF)
2sk1105.pdf
isc N-Channel MOSFET Transistor 2SK1105DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, UPS,DC-DC converters ,general purpose power amplifier applications .ABSOLUTE MAXIMUM RATIN
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf
2sk1108.pdf
DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1108N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTION The 2SK1108 is suitable for converter of ECM.FEATURES Compact package High forward transfer admittance1000 S TYP. (IDSS = 100 A)1600 S TYP. (IDSS = 200 A) Includes diode and high resistance at G - SORDERING INFORM
2sk1109.pdf
DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1109N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SK1109 is suitable for converter of ECM.0.8FEATURES Compact package1. Source High forward transfer admittance2. Drain3. Gate1000 S TYP. (IDSS = 100 A)1 21600 S TYP. (IDSS = 200
2sk1103.pdf
Silicon Junction FETs (Small Signal) 2SK11032SK1103Silicon N-Channel JunctionUnit : mmFor switching+0.22.8 0.3Complementary with 2SJ163 +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1Low ON-resistanceLow-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Gate-Drain voltage VGDS 65 V0.4 0.2Drain c
2sk1104.pdf
Silicon Junction FETs (Small Signal) 2SK11042SK1104Silicon N-Channel JunctionUnit : mmFor switching4.0 0.2Complementary with 2SJ164 FeaturesLow ON-resistanceLow-noise characteristicsmarking1 2 3 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1.27 1.271 : SourceGate-Drain voltage VGDS 65 V 2.54 0.152 : GateDrain current ID 20 mA3
2sk1109.pdf
UTC K1109 JUNCTION FIELD EFFECT TRANSISTORN-CHANNEL JFET FORELECTRET CONDENSERMICROPHONE1 2DESCRIPTION The UTC K1109 is N-channel JFET for electretcondenser microphone.3FEATURES*High gm implies low transfer loss*Built-in gate-source diode and resistor implies fastTOP VIEW power on settling timeSOT-23 1:SOURCE 2:DRAIN 3:GATEABSOLUTE MAXIMUM RATINGS ( Operating tem
2sk1109.pdf
SMD Type MOSFETN-Channel Junction Field Effect Transistors2SK1109SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 10m A1 2 High forward transfer admittance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.11000 s TYP. (IDSS = 100 A)1600 s TYP. (IDSS = 200 A) Includes diode and high resistance at G - S1. Drain2. So
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