2SK1172-01 Todos los transistores

 ..1. Size:139K  no
 2sk1171-01 2sk1172-01.pdf

 7.1. Size:60K  no
 2sk1172.pdf

2SK1172

 7.2. Size:203K  inchange semiconductor
 2sk1172.pdf

isc N-Channel MOSFET Transistor 2SK1172 DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 8.1. Size:78K  1
 2sk1179 2sk1183.pdf

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK1179 500 20 8.5 34 85 400 500 20 250 500 2.0 4.0 10 250 2SK1183 200 20 3 12 25 30 500 20 250 200 2.0

 8.2. Size:42K  1
 2sk1178.pdf

2SK1178 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V V 500 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 4.0 A I 250 A V = 500V, V = 0V D DSS DS GS I 16 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D

 8.3. Size:42K  1
 2sk1177.pdf

2SK1177 External dimensions 1......FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V V 500 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 2.5 A I 250 A V = 500V, V = 0V D DSS DS GS I 10 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D (

 8.4. Size:299K  toshiba
 2sk117.pdf

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit mm High Yfs Y = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS High breakdown voltage V = -50 V GDS Low noise NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k ) DS D G High input impedance I = -1 nA (max) (V = -30 V) GS

 8.5. Size:44K  hitachi
 2sk1169 2sk1170.pdf

2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25 C) Item Symbol

 8.6. Size:259K  inchange semiconductor
 2sk1170.pdf

isc N-Channel MOSFET Transistor 2SK1170 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.7. Size:62K  inchange semiconductor
 2sk1171.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1171 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage