2SK1199 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1199
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 900 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Tiempo de subida (tr): 60 nS
Conductancia de drenaje-sustrato (Cd): 260 pF
Resistencia entre drenaje y fuente RDS(on): 7 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET 2SK1199
2SK1199 Datasheet (PDF)
2sk1199.pdf
isc N-Channel MOSFET Transistor 2SK1199DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel
2sk1192.pdf
2SK1192External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 40 A I 250 A V = 60V, V = 0VD DSS DS GSI 160 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD
2sk1197.pdf
2SK1197Silicon N-Channel enhanced MOS FETApplicationHigh frequency amplifierFeatures High endurance capability against static electrical breakdown (C = 200pF) Between Gate from Source : 500 V Typ Between Drain from Source : 1000 V Min, 1500 V Typ Wide forward transfer admittance|yfs| = 150 mS Typ High breakdown voltage VDSS = 100V Small output capacitance
2sk1191.pdf
2SK1191External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 30 A I 250 A V = 60V, V = 0VD DSS DS GSI 120 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (p
2sk1190.pdf
2SK1190External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 22 A I 250 A V = 60V, V = 0VD DSS DS GSI 88 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (pu
2sk1197.pdf
isc N-Channel MOSFET Transistor 2SK1197FEATURESDrain Current I = 0.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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