2SK693 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK693
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO3PL

Búsqueda de reemplazo de MOSFET 2SK693

2SK693 Datasheet (PDF)

..1. Size:235K inchange semiconductor
2sk693.pdf

isc N-Channel MOSFET Transistor 2SK693DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed.high Current switching applications.DC converter and motor drive applications.ABSOLUTE

9.1. Size:148K 1
2sk699.pdf

9.2. Size:32K panasonic
2sk690.pdf

High Frequency FETs 2SK6902SK690GaAs N-Channel MESUnit : mmFor UHF medium-output power amplification1.5 0.14.5 0.11.6 0.2 Features Large collector dissipation PC45 Downsizing of sets by mini power package and automatic insertionby magazine packing are available.0.4 0.080.4 0.040.5 0.081.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta = 25

9.3. Size:139K hitachi
2sk696.pdf

"2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003

9.4. Size:236K inchange semiconductor
2sk695.pdf

isc N-Channel MOSFET Transistor 2SK695DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

9.5. Size:235K inchange semiconductor
2sk694.pdf

isc N-Channel MOSFET Transistor 2SK694DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed.high Current switching applications.DC converter and motor drive applications.ABSOLUTE

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FQPF9N50C | HQB7N65C | 2N6659 | 18N50 | IRL520N | 40600 | IRF5305

Liste

Recientemente añadidas las descripciónes de los transistores: