2SK694 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK694
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: TO3PL
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2SK694 Datasheet (PDF)
2sk694.pdf

isc N-Channel MOSFET Transistor 2SK694DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed.high Current switching applications.DC converter and motor drive applications.ABSOLUTE
2sk690.pdf

High Frequency FETs 2SK6902SK690GaAs N-Channel MESUnit : mmFor UHF medium-output power amplification1.5 0.14.5 0.11.6 0.2 Features Large collector dissipation PC45 Downsizing of sets by mini power package and automatic insertionby magazine packing are available.0.4 0.080.4 0.040.5 0.081.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta = 25
2sk696.pdf

"2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003
Otros transistores... 2SK1105-R , 2SK1171 , 2SK1171-01 , 2SK1172 , 2SK1172-01 , 2SK1199 , 2SK1200 , 2SK693 , IRF840 , 2SK695 , 2SK696 , 2SK715U-AC , 2SK715V-AC , 2SK719 , 2SK723 , 2SK726 , 2SK685 .
History: AP3N4R0H | NCE60N2K1R | SE20075
History: AP3N4R0H | NCE60N2K1R | SE20075



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