2SK3507 Todos los transistores

 ..1. Size:138K  nec
 2sk3507.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3507 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3507 is N-channel MOS FET device that features PART NUMBER PACKAGE a low on-state resistance and excellent switching characteristics, 2SK3507-ZK TO-252 (MP-3ZK) designed for low voltage high current applications such as DC/DC converter with synchronous rect

 8.1. Size:156K  toshiba
 2sk3506.pdf

2SK3506 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3506 Relay Drive and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 16 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement model Vth = 1.5 to

 8.2. Size:51K  nec
 2sk3503.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not 0.3 0.05 0.1+0.1 0.05 necessary to consider a drive current, this FET is ideal as an actuator for low-current porta

 8.3. Size:114K  fuji
 2sk3502-01mr.pdf

FUJI POWER MOSFET 2SK3502-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwis

 8.4. Size:97K  fuji
 2sk3504-01.pdf

FUJI POWER MOSFET200303 2SK3504-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 8.5. Size:114K  fuji
 2sk3505.pdf

FUJI POWER MOSFET 2SK3505-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwis

 8.6. Size:104K  fuji
 2sk3501-01.pdf

2SK3501-01 FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 8.7. Size:98K  fuji
 2sk3505-01mr.pdf

FUJI POWER MOSFET200303 2SK3505-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 8.8. Size:138K  fuji
 2sk3508.pdf

2SK3508-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless oth

 8.9. Size:49K  hitachi
 2sk349 2sk350.pdf

 8.10. Size:1150K  kexin
 2sk3503.pdf

 8.11. Size:288K  inchange semiconductor
 2sk3504.pdf

isc N-Channel MOSFET Transistor 2SK3504 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.46 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.12. Size:286K  inchange semiconductor
 2sk3506.pdf

isc N-Channel MOSFET Transistor 2SK3506 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:280K  inchange semiconductor
 2sk3502-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3502-01MR FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.14. Size:255K  inchange semiconductor
 2sk3505.pdf

Isc N-Channel MOSFET Transistor 2SK3505 FEATURES With To-220F packaging Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 5

 8.15. Size:289K  inchange semiconductor
 2sk3501.pdf

isc N-Channel MOSFET Transistor 2SK3501 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.16. Size:234K  inchange semiconductor
 2sk350.pdf

isc N-Channel MOSFET Transistor 2SK350 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-