2SK3557-6-TB-E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3557-6-TB-E
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 15 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 0.05 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 40 Ohm
Paquete / Cubierta: SOT23

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2SK3557-6-TB-E Datasheet (PDF)

..1. Size:254K sanyo
2sk3557-6-tb-e.pdf

2SK3557Ordering number : EN7169ASANYO SemiconductorsDATA SHEETN-Channel Junctin Silicon FETHigh-Frequency Low-Noise2SK3557Amplifier ApplicationsApplications AM tuner RF amplification Low noise amplifierFeatures Large yfs | | Small Ciss Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer Ultralow noise figureS

7.1. Size:34K sanyo
2sk3557.pdf

Ordering number : ENN71692SK3557N-Channel Junction Silicon FET2SK3557Low-Noise HF Amplifier ApplicationsPreliminaryApplications Package Dimensions AM tuner RF amplifier. unit : mm Low noise amplifier. 2050A[2SK3557]Features Large yfs.0.40.163 Small Ciss. Ultrasmall-sized package permitting 2SK3557-0 to 0.1applied sets to be made smaller a

7.2. Size:301K onsemi
2sk3557.pdf

Ordering number : EN7169A2SK3557N-Channel JFEThttp://onsemi.com15V, 10 to 32mA, 35mS, CPApplications AM tuner RF amplification Low noise amplifierFeatures Large yfs | | Small Ciss Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer Ultralow noise figureSpecificationsAbsolute Maximum Ratings at Ta=25CParamete

8.1. Size:112K fuji
2sk3554-01.pdf

2SK3554-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

8.2. Size:266K fuji
2sk3556-01l-s-sj.pdf

2SK3556-01L,S,SJ200304FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

8.3. Size:119K fuji
2sk3550-01r.pdf

2SK3550-01R200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other

8.4. Size:113K fuji
2sk3555-01mr.pdf

2SK3555-01MR200304FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

8.5. Size:289K inchange semiconductor
2sk3554-01.pdf

isc N-Channel MOSFET Transistor 2SK3554-01FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

8.6. Size:357K inchange semiconductor
2sk3556-01s.pdf

isc N-Channel MOSFET Transistor 2SK3556-01SFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.7. Size:286K inchange semiconductor
2sk3550-01r.pdf

isc N-Channel MOSFET Transistor 2SK3550-01RFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.8. Size:283K inchange semiconductor
2sk3556-01l.pdf

isc N-Channel MOSFET Transistor 2SK3556-01LFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.9. Size:279K inchange semiconductor
2sk3555-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3555-01MRFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

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