2SK3659 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK3659FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

2SK3658 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK3658 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.23 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement-mode : Vth = 0.8 to 2.0 V (VD

2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current Unit: mmand Impedance Converter Applications High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 80 (typ.) (IDSS = 5 mA) Small package Absolute Maximum Rating

2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3653N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMPACKAGE DRAWING (Unit: mm)DESCRIPTION The 2SK3653 is suitable for converter of ECM.+0.10.3 0.05 0.13 0.05FEATURES Compact packageG 0~0.05 High forward transfer admittance1000 S TYP. (IDSS = 100 A)D S1600 S TYP. (IDSS =

2SK3651-01R[0311]FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-3PFHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

2SK3650-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsP4Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

SMD Type ICSMD Type TransistorsN-channel Enhancement Mode MOSFET2SK3652TO-263Unit: mm+0.24.57-0.21.27+0.1-0.1FeaturesLow on-resistance, low QgHigh avalanche resistanceFor high-speed switching0.1max1.27+0.1-0.1+0.10.81-0.12.541Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

isc N-Channel MOSFET Transistor 2SK3650-01SJFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

isc N-Channel MOSFET Transistor 2SK3651-01RFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 100m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

isc N-Channel MOSFET Transistor 2SK3650-01SFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

isc N-Channel MOSFET Transistor 2SK3650-01LFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol